SBOSAA3A July   2024  – November 2024 TRF1108

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 AC-Coupled Configuration
      2. 6.3.2 DC-Coupled Configuration
    4. 6.4 Device Functional Modes
      1. 6.4.1 Power-Down Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Thermal Considerations
    2. 7.2 Typical Application
      1. 7.2.1 RF DAC Buffer Amplifier
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Single-Supply Operation
      2. 7.3.2 Dual-Supply Operation
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RPV|12
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Differential-to-single-ended (D2S) RF amplifier
  • Near-DC to 8GHz
  • Gain: 15.5dB at 2GHz
  • OP1dB:
    • 2GHz: 12dBm
    • 6GHz: 10dBm
  • OIP3:
    • 2GHz: 28dBm
    • 6GHz: 28.5dBm
  • Noise figure (NF) and input noise spectral density:
    • 2GHz: 11dB and –163dBm/Hz
    • 6GHz: 11.5dB and –162.5dBm/Hz
  • HD2 and HD3:
    • HD2 (1GHz): –60dBc at 2dBm
    • HD3 (1GHz): –58dBc at 2dBm
  • Additive (residual) phase noise:
    • 1GHz: –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±2º
  • Differential input matched to 100Ω
  • Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA