SBOSAA3 July   2024 TRF1108

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 AC-Coupled Configuration
      2. 6.3.2 DC-Coupled Configuration
    4. 6.4 Device Functional Modes
      1. 6.4.1 Power-Down Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Thermal Considerations
    2. 7.2 Typical Application
      1. 7.2.1 RF DAC Buffer Amplifier
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Single-Supply Operation
      2. 7.3.2 Dual-Supply Operation
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RPV|12
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics

at TA = 25oC, VDD = 5V, 100nF ac-coupling capacitors at input and output, differential input with RS = 100Ω, output with RL = 50Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
SSBW Small-signal 3dB bandwidth Pin = –20dBm 12 GHz
S21 Power gain f = 2GHz 15.5 dB
S11 Input return loss f = 10MHz to 8GHz –15 dB
S22 Output return loss f = 10MHz to 8GHz –12 dB
S12 Reverse isolation f = 2GHz TBD dB
ImbGAIN Gain imbalance f = 10MHz to 8GHz ±0.6 dB
ImbPHASE Phase imbalance f = 10MHz to 8GHz ±2 degrees
CMRR Common-mode rejection ratio  f = 2GHz –42 dB
OP1dB Output 1dB compression point f = 0.5GHz 11.5 dBm
f = 2GHz 12
f = 4GHz 11.4
f = 6GHz 9.8
f = 8GHz 8
NF Noise figure f = 0.5GHz 10.5 dB
f = 2GHz 10.8
f = 4GHz 11
f = 6GHz 11.4
f = 8GHz 11.9
OIP2 Output second-order intercept point f = 0.5GHz, PO = –4dBm per tone                     
(10MHz spacing)		 TBD dBm
f = 1GHz, PO = –4dBm per tone                         
(10MHz spacing)		 TBD
f = 2GHz, PO = –4dBm per tone                       
(10MHz spacing)		 TBD
f = 4GHz, PO = –4dBm per tone                         
(10MHz spacing)		 TBD
OIP3 Output third-order intercept point f = 0.5GHz, PO= –4dBm per tone                     
(10MHz spacing)		 32 dBm
f = 2GHz, PO = –4dBm per tone               
(10MHz spacing)		 28
f = 4GHz, PO = –4dBm per tone                       
(10MHz spacing)		 27
f = 6GHz, PO = –4dBm per tone                       
(10MHz spacing)		 30
f = 8GHz, PO = –4dBm per tone               
(10MHz spacing)		 21.5
HD2 Second-order harmonic distortion f = 0.5GHz, PO = 2dBm –60 dBc
f = 1GHz, PO = 2dBm –58
f = 2GHz, PO = 2dBm –52
f = 4GHz, PO = 2dBm –38
HD3 Third-order harmonic distortion f = 0.5GHz, PO = 2dBm –62 dBc
f = 1GHz, PO = 2dBm –58
f = 2GHz, PO = 2dBm –52
f = 4GHz, PO = 2dBm –44
IMD2 Second-order intermodulation distortion f = 0.5GHz, PO =  –4dBm per tone                     
(10MHz spacing)		 TBD dBc
f = 1GHz, PO =  –4dBm per tone                       
(10MHz spacing)		 TBD
f = 2GHz, PO =  –4dBm per tone                         
(10MHz spacing)		 TBD
f = 4GHz, PO =  –4dBm per tone                         
(10MHz spacing)		 TBD
IMD3 Third-order intermodulation distortion f = 0.5GHz, PO =  –4dBm per tone                 
(10MHz spacing)		 –72 dBc
f = 2GHz, PO =  –4dBm per tone             
(10MHz spacing)		 –64
f = 4GHz, PO =  –4dBm per tone                   
(10MHz spacing)		 –62
f = 6GHz, PO =  –4dBm per tone                       
(10MHz spacing)		 –68
f = 8GHz, PO =  –4dBm per tone                     
(10MHz spacing)		 –51
PN Additive phase noise f = 1GHz, PO = 6dBm, 100Hz offset –138.9 dBc/Hz
f = 1GHz, PO = 6dBm, 1kHz offset –148
f = 1GHz, PO = 6dBm, 10kHz offset –154.6
DC CHARACTERISTICS
VICM Input common-mode voltage VSS + 1.34 V
Input common-mode voltage range TBD mV
VOB DC output bias voltage VDD – 1.68 V
VOS Output offset voltage TBD mV
ZI Differential input impedance f = dc (internal to the device) 100 Ω
ZO Single-ended output impedance f = dc (internal to the device) 30 Ω
TRANSIENT
tREC Overdrive recovery time Using a –0.5Vp input pulse duration of 2ns TBD ns
POWER SUPPLY
IQA Active current Current on VDD pin, PD = 0 175 mA
IQPD Power-down quiescent current Current on VDD pin, PD = 1 14 mA
ENABLE
VPDHIGH PD pin logic high VSS + 1.45 V
VPDLOW PD pin logic low VSS + 0.8 V
IPDBIAS PD bias current Current on PD pin, PD = 1 TBD µA
CPD PD pin capacitance TBD pF
tON Turn-on time 50% VPD to 90% RF TBD ns
tOFF Turn-off time 50% VPD to 10% RF TBD ns