SBOS971 December 2023 TRF1305B2
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
AC PERFORMANCE | ||||||
SSBW | Small-signal 3-dB bandwidth | PIN = –20 dBm at each input | 7.6 | GHz | ||
Small-signal 1-dB bandwidth | 6.5 | |||||
LSBW | Large-signal 3-dB bandwidth | Differential PIN = –3 dBm | 7 | GHz | ||
Large-signal 1-dB bandwidth | 6.5 | |||||
S21 | Power gain | f = 4 GHz | 9.8 | dB | ||
Gain variation over temperature | f = 4 GHz, TA = –40℃ to +85℃ | 0.7 | ||||
S11 | Input return loss | f = 10 MHz to 7.5 GHz | –10 | dB | ||
S12 | Reverse isolation | f < 10 GHz (when enabled) | –20 | dB | ||
GIMB | Differential gain imbalance | f < 5 GHz, S2D, PIN = –20 dBm with 50-Ω source impedance | ±0.2 | dB | ||
PHIMB | Differential phase imbalance | ±2 | ° | |||
OP1dB | Output 1-dB compression point | f = 500 MHz | 15.7 | dBm | ||
f = 1 GHz | 16 | |||||
f = 2 GHz | 16 | |||||
f = 3 GHz | 15 | |||||
f = 4 GHz | 12.5 | |||||
f = 5 GHz | 11.3 | |||||
HD2 | Second-order harmonic distortion | f = 500 MHz, VO = 2 VPP | –73 | dBc | ||
f = 1 GHz, VO = 2 VPP | –70 | |||||
f = 2 GHz, VO = 2 VPP | –60 | |||||
f = 3 GHz, VO = 2 VPP | –55 | |||||
f = 4 GHz, VO = 2 VPP | –46 | |||||
HD3 | Third-order harmonic distortion | f = 500 MHz, VO = 2 VPP | –68 | dBc | ||
f = 1 GHz, VO = 2 VPP | –60 | |||||
f = 2 GHz, VO = 2 VPP | –55 | |||||
f = 3 GHz, VO = 2 VPP | –53 | |||||
f = 4 GHz, VO = 2 VPP | –47 | |||||
OIP2 | Output second-order intercept point | f = 500 MHz, PO = 1 dBm per tone, 2-MHz spacing |
75 | dBm | ||
f = 1 GHz, PO = 1 dBm per tone, 2-MHz spacing |
72 | |||||
f = 2 GHz, PO = 1 dBm per tone, 2-MHz spacing |
60 | |||||
f = 3 GHz, PO = 1 dBm per tone, 2-MHz spacing |
53 | |||||
f = 4 GHz, PO = 1 dBm per tone, 2-MHz spacing |
45 | |||||
f = 5 GHz, PO = 1 dBm per tone, 2-MHz spacing |
49 | |||||
OIP3 | Output third-order intercept point | f = 500 MHz, PO = 1 dBm per tone, 2-MHz spacing |
43.5 | dBm | ||
f = 1 GHz, PO = 1 dBm per tone, 2-MHz spacing |
39.2 | |||||
f = 2 GHz, PO = 1 dBm per tone, 2-MHz spacing |
34 | |||||
f = 3 GHz, PO = 1 dBm per tone, 2-MHz spacing |
30.5 | |||||
f = 4 GHz, PO = 1 dBm per tone, 2-MHz spacing |
24 | |||||
f = 5 GHz, PO = 1 dBm per tone, 2-MHz spacing |
21 | |||||
NF | Noise figure | f = 500 MHz | 8.4 | dB | ||
f = 1 GHz | 8.8 | |||||
f = 2 GHz | 10.2 | |||||
f = 4 GHz | 12 | |||||
f = 5 GHz | 12.4 | |||||
NSD | Output noise spectral density | f = 500 MHz | –155.6 | dBm/Hz | ||
f = 1 GHz | –155.2 | |||||
f = 2 GHz | –153.8 | |||||
f = 4 GHz | –152 | |||||
f = 5 GHz | –151.6 | |||||
DC PERFORMANCE | ||||||
VOD-MAX | Max differential output voltage | f = 1 GHz | 4 | VPP | ||
Slew rate | 2-V VO step, S2D configuration, VS+ = 2.5 V, VS– = –2.5 V |
25 | kV/µs | |||
Output differential offset voltage | ±3 | mV | ||||
Overdrive recovery time | From 2 × overdrive of each SE output to each output voltage settling to < ±50 mV | 6 | ns | |||
COMMON-MODE | ||||||
VICM | Input common-mode voltage | Default range(1) | VS– + 1.5 | VS– + 3.5 | V | |
VOCM | Output common-mode voltage | VS– + 2 | VS– + 3 | V | ||
Output common-mode offset voltage from VOCM voltage | ±10 | mV | ||||
IMPEDANCE | ||||||
Zin-SE | Single ended input impedance | At INPx pin with appropriate termination on INMx pin | 47 | Ω | ||
ZO-DIFF | Differential output impedance | f = near dc | 8 | Ω | ||
CHANNEL-TO-CHANNEL PERFORMANCE | ||||||
Channel-to-channel amplitude matching | f < 2 GHz | 0.05 | dB | |||
f < 5 GHz | 0.3 | |||||
Isolation | f < 2 GHz | –55 | dB | |||
f < 5 GHz | –50 | |||||
POWER SUPPLY | ||||||
IQA | Active quiescent current | Both channels active | 180 | mA | ||
One channel active, other is powered down | 102 | |||||
IQPD | Power-down quiescent current | Both channels powered down | 25 | mA | ||
POWER DOWN | ||||||
VPD_Hi | PD pin logic high | Referenced to PAD, see Section 6.1 | 1.35 | V | ||
VPD_Lo | PD pin logic low | Referenced to PAD, see Section 6.1 | 0.3 | V | ||
IPD_Bias | PD bias current (current on PD pin) | PD = high (1.8-V logic) | 15 | µA | ||
PD = high (3.3-V logic) | 30 | |||||
tON | Turn-on time | From 50% VPD transition to 90% RF out | 25 | ns | ||
tOFF | Turn-off time | From 50% VPD transition to 10% RF out | 20 | ns |