SLLS822C July   2007  – December 2024 TRSF3221E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  ESD Ratings, IEC Specifications
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Thermal Resistance Characteristics
    6. 5.6  Electrical Characteristics
    7. 5.7  Electrical Characteristics, Driver
    8. 5.8  Switching Characteristics, Driver
    9. 5.9  Electrical Characteristics, Receiver
    10. 5.10 Switching Characteristics, Receiver
    11. 5.11 Electrical Characteristics, Auto-Powerdown
    12. 5.12 Switching Characteristics, Auto-Powerdown
    13. 5.13 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Typical Application
        1. 8.1.1.1 Design Requirements
        2. 8.1.1.2 Detailed Design Procedure
      2. 8.1.2 Application Performance Plot
    2. 8.2 Power Supply Recommendations
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4 Electrostatic Discharge Caution

TRSF3221E This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.