SCDS225B March   2007  – January 2015 TS3A44159

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics for 1.8-V Supply
    6. 6.6  Electrical Characteristics for 2.1-V Supply
    7. 6.7  Electrical Characteristics for 2.5-V Supply
    8. 6.8  Electrical Characteristics for 3.3-V Supply
    9. 6.9  Electrical Characteristics for 4.3-V Supply
    10. 6.10 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Trademarks
    2. 12.2 Electrostatic Discharge Caution
    3. 12.3 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • RGT|16
  • RSV|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VCC Supply voltage(3) –0.5 4.6 V
VNC
VNO
VCOM		 Analog voltage(3)(4)(5) –0.5 VCC + 0.5 V
IK Analog port diode current VNC, VNO, VCOM < 0 –50 mA
INC
INO
ICOM		 ON-state switch current VNC, VNO, VCOM = 0 to VCC –200 200 mA
ON-state peak switch current(6) –400 400
VIN Digital input voltage –0.5 4.6 V
IIK Digital input clamp current(3)(4) VI < 0 –50 mA
ICC Continuous current through VCC 100 mA
IGND Continuous current through GND –100 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 4.6 V maximum.
(6) Pulse at 1-ms duration <10% duty cycle

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply Voltage 0 4.3 V
VNC
VNO
VCOM		 Analog Voltage 0 4.3 V
VIN Digital Input Voltage 0 4.3 V

6.4 Thermal Information

THERMAL METRIC(1) TS3A44159 UNIT
PW RGT RSV
16 PINS
RθJA Junction-to-ambient thermal resistance 108.0 45.4 107.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 43.0 58.1 41.2
RθJB Junction-to-board thermal resistance 53.1 18.6 43.6
ψJT Junction-to-top characterization parameter 4.6 1.1 1.1
ψJB Junction-to-board characterization parameter 52.5 18.6 43.6
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 3.9 N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics for 1.8-V Supply

VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
VCOM,
VNO, VNC		 Analog signal
range		 0 VCC V
Ron ON-state
resistance		 VNO or VNC = 1.5 V,
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 1.65 V 0.5 0.7 Ω
Full 0.8
ΔRon ON-state
resistance match
between channels		 VNO or VNC = 1.5 V, 0.6 V
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 1.65 V 0.05 0.07 Ω
Full 0.1
Ron(flat) ON-state
resistance
flatness		 VNO or VNC = 1.5 V, 0.6 V
1.5 V, 2.5 V,
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 1.65 V 0.5 0.7 Ω
Full 0.8
INO(OFF),
INC(OFF)		 NC, NO
OFF leakage
current		 VNO or VNC = 0.3 V,
VCOM = 1.65 V,
or
VNO or VNC = 1.65 V,
VCOM = 0.3 V,		 See Figure 17 25°C 1.95 V –10 0.5 10 nA
Full –20 20
INO(ON),
INC(ON)		 NC, NO
ON leakage
current		 VNO or VNC = 0.3 V,
VCOM = Open,
or
VNO or VNC = 1.65 V,
VCOM = Open,		 See Figure 18 25°C 1.95 V –10 0.1 10 nA
Full –20 20
ICOM(ON) COM
ON leakage
current		 VNO or VNC = Open,
VCOM = 0.3V,
or
VNO or VNC = Open,
VCOM = 1.65 V,		 See Figure 18 25°C 1.95 V –10 0.1 10 nA
Full –20 20
DIGITAL CONTROL INPUTS (IN1-2, IN3-4)(2)
VIH Input logic high Full 1 4.3 V
VIL Input logic low Full 0 0.4 V
IIH, IIL Input leakage current VIN = 3.6 V or 0 25°C 1.95 V 0.5 10 nA
Full 50
DYNAMIC
tON Turn-on time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 1.8 V 40 70 ns
Full 1.65 V to 1.95 V 75
tOFF Turn-off time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 1.8 V 22 45 ns
Full 1.65 V to 1.95 V 50
tBBM Break-before-make time VNC = VNO = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 1.8 V 5 25 70 ns
Full 1.65 V to 1.95 V 4 75
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF 25°C 1.8 V 64 pC
CNC(OFF),
CNO(OFF)		 NC, NO
OFF capacitance		 VNC or VNO = VCC or GND,
Switch OFF,		 See Figure 19 25°C 1.8 V 52 pF
CNC(ON), CNO(ON) NC, NO
ON capacitance		 VNC or VNO = VCC or GND,
Switch OFF,		 See Figure 19 25°C 1.8 V 164 pF
CCOM(ON) COM
ON capacitance		 VCOM = VCC or GND,
Switch ON,		 See Figure 19 25°C 1.8 V 164 pF
CI Digital input capacitance VI = VCC or GND 25°C 1.8 V 2.5 pF
BW Bandwidth RL = 50 Ω, Switch ON 25°C 1.8 V 35 MHz
OISO OFF isolation RL = 50 Ω,
f = 100 kHz,		 Switch OFF 25°C 1.8 V –71 dB
XTALK Crosstalk RL = 50 Ω,
f = 100 kHz,		 Switch ON 25°C 1.8 V –73 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,
VCOM = GND to VCC		 f = 20 Hz to
20 kHz		 25°C 1.8 V 0.1%
SUPPLY
ICC Positive supply current VI = VCC or GND, Switch ON or OFF 25°C 1.95 V 0.001 0.05 μA
Full 0.15
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.6 Electrical Characteristics for 2.1-V Supply

VCC = 2.00 V to 2.20 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
DIGITAL CONTROL INPUTS (IN1-2, IN3-4)
VIH Input logic high Full 1.2 4.3 V
VIL Input logic low Full 0 0.5 V
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum

6.7 Electrical Characteristics for 2.5-V Supply

VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
VCOM,
VNO, VNC		 Analog signal
range		 0 VCC V
Ron ON-state
resistance		 VNO or VNC = 1.8 V,
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 2.3 V 0.45 0.6 Ω
Full 0.7
ΔRon ON-state
resistance match
between channels		 VNO or VNC = 1.8 V, 0.8 V,
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 2.3 V 0.045 0.07 Ω
Full 0.1
Ron(flat) ON-state
resistance
flatness		 VNO or VNC = 1.8 V, 0.8 V
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 2.3 V 0.06 0.15 Ω
Full 0.2
INO(OFF),
INC(OFF)		 NC, NO
OFF leakage
current		 VNO or VNC = 0.3 V,
VCOM = 2.3 V,
or
VNO or VNC = 2.3 V,
VCOM = 0.3V,		 See Figure 17 25°C 2.7 V –10 0.5 10 nA
Full –20 20
INO(ON),
INC(ON)		 NC, NO
ON leakage
current		 VNO or VNC = 0.3 V,
VCOM = Open,
or
VNO or VNC = 2.3 V,
VCOM = Open,		 See Figure 18 25°C 2.7 V –10 0.1 10 nA
Full –20 20
ICOM(ON) COM
ON leakage
current		 VNO or VNC = Open,
VCOM = 0.3 V,
or
VNO or VNC = Open,
VCOM = 2.3 V,		 See Figure 18 25°C 2.7 V –10 0.1 10 nA
Full –20 20
DIGITAL CONTROL INPUTS (IN1-2, IN3-4)(2)
VIH Input logic high Full 1.2 4.3 V
VIL Input logic low Full 0 0.6 V
IIH, IIL Input leakage current VIN = 3.6 V or 0 25°C 2.7 V 0.5 10 nA
Full 50
DYNAMIC
tON Turn-on time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 2.5 V 2.6 47 ns
Full 2.3 V to 2.7 V 50
tOFF Turn-off time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 2.5 V 16.5 34 ns
Full 2.3 V to 2.7 V 35
tBBM Break-before-make time VNC = VNO = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 2.5 V 4 15 35 ns
Full 2.3 V to 2.7 V 3 35
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF 25°C 2.5 V 84 pC
CNC(OFF),
CNO(OFF)		 NC, NO
OFF capacitance		 VNC or VNO = VCC or GND,
Switch OFF,		 See Figure 19 25°C 2.5 V 52 pF
CNC(ON),
CNO(ON)		 NC, NO
ON capacitance		 VNC or VNO = VCC or GND,
Switch OFF,		 See Figure 19 25°C 2.5 V 163 pF
CCOM(ON) COM
ON capacitance		 VCOM = VCC or GND, See Figure 19 25°C 2.5 V 163 pF
CI Digital input capacitance VI = VCC or GND 25°C 2.5 V 2.5 pF
BW Bandwidth RL = 50 Ω, Switch ON 25°C 2.5 V 35 MHz
OISO OFF isolation RL = 50 Ω,
f = 100 kHz,		 Switch OFF 25°C 2.5 V –71 dB
XTALK Crosstalk RL = 50 Ω,
f = 100 kHz,		 Switch ON 25°C 2.5 V –73 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,
VCOM = GND to VCC		 f = 20 Hz to 20 kHz 25°C 2.5 V 0.009%
SUPPLY
ICC Positive supply current VI = VCC or GND, Switch ON or OFF 25°C 2.5 V 0.004 0.1 μA
Full 0.5
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.8 Electrical Characteristics for 3.3-V Supply

VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
VCOM,
VNO, VNC		 Analog signal
range		 0 VCC V
Ron ON-state
resistance		 VNO or VNC = 2.0 V,
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 3 V 0.37 0.55 Ω
Full 0.6
ΔRon ON-state
resistance match
between channels		 VNO or VNC = 2.0 V, 0.8 V,
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 3 V 0.06 0.07 Ω
Full 0.1
Ron(flat) ON-state
resistance
flatness		 VNO or VNC = 2.0 V, 0.8 V
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 3 V 0.05 0.1 Ω
Full 0.1
INO(OFF),
INC(OFF)		 NC, NO
OFF leakage
current		 VNO or VNC = 0.3 V,
VCOM = 3.0 V,
or
VNO or VNC = 3.0 V,
VCOM = 0.3 V,		 See Figure 17 25°C 3.6 V –15 5 15 nA
Full –50 50
INO(ON),
INC(ON)		 NC, NO
ON leakage
current		 VNO or VNC = 0.3 V,
VCOM = Open,
or
VNO or VNC = 3.0 V,
VCOM = Open,		 See Figure 18 25°C 3.6 V –15 5 15 nA
Full –50 50
ICOM(ON) COM
ON leakage
current		 VNO or VNC = Open,
VCOM = 0.3 V,
or
VNO or VNC = Open,
VCOM = 3.0 V,		 See Figure 18 25°C 3.6 V –15 5 15 nA
Full –50 50
DIGITAL CONTROL INPUTS (IN1-2, IN3-4)(2)
VIH Input logic high Full 1.25 4.3 V
VIL Input logic low Full 0 0.8 V
IIH, IIL Input leakage current VIN = 3.6 V or 0 25°C 3.6 V 0.5 10 nA
Full 50
DYNAMIC
tON Turn-on time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 3 V 20 38 ns
Full 3 V to 3.6 V 40
tOFF Turn-off time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 3 V 14 34 ns
Full 3 V to 3.6 V 35
tBBM Break-before-make time VNC = VNO = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 3 V 3 11 35 ns
Full 3 V to 3.6 V 2 55
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF 25°C 3 V 109 pC
CNC(OFF),
CNO(OFF)		 NC, NO
OFF capacitance		 VNC or VNO = VCC or GND,
Switch OFF,		 See Figure 19 25°C 3 V 51 pF
CNC(ON),
CNO(ON)		 NC, NO
ON capacitance		 VNC or VNO = VCC or GND,
Switch OFF,		 See Figure 19 25°C 3 V 162 pF
CCOM(ON) COM
ON capacitance		 VCOM = VCC or GND,
Switch ON,		 See Figure 19 25°C 3 V 162 pF
CI Digital input capacitance VI = VCC or GND 25°C 3 V 2.5 pF
BW Bandwidth RL = 50 Ω, Switch ON 25°C 3 V 35 MHz
OISO OFF isolation RL = 50 Ω,
f = 100 kHz,		 Switch OFF 25°C 3 V –71 dB
XTALK Crosstalk RL = 50 Ω,
f = 100 kHz,		 Switch ON 25°C 3 V –73 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,
VCOM = GND to VCC		 f = 20 Hz to 20 kHz 25°C 3 V 0.003%
SUPPLY
ICC Positive supply current VI = VCC or GND, Switch ON or OFF 25°C 3.6 V 0.015 0.2 μA
Full 0.7
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.9 Electrical Characteristics for 4.3-V Supply

TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
VCOM,
VNO, VNC		 Analog signal
range		 0 VCC V
Ron ON-state
resistance		 VNO or VNC = 2.5 V,
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 4.3 V 0.3 0.45 Ω
Full 0.5
ΔRon ON-state
resistance match
between channels		 VNO or VNC = 2.5 V,
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 4.3 V 0.05 0.07 Ω
Full 0.1
Ron(flat) ON-state
resistance
flatness		 VNO or VNC = 1 V,
1.5 V, 2.5 V,
ICOM = –100 mA,		 Switch ON,
See Figure 16		 25°C 4.3 V 0.02 0.1 Ω
Full 0.1
INO(OFF),
INC(OFF)		 NC, NO
OFF leakage
current		 VNO or VNC = 0.3 V,
VCOM = 3.0 V,
or
VNO or VNC = 3.0 V,
VCOM = 0.3 V,		 See Figure 17 25°C 4.3 V –20 5 20 nA
Full –90 90
INO(ON),
INC(ON)		 NC, NO
ON leakage
current		 VNO or VNC = 0.3 V,
VCOM = Open,
or
VNO or VNC = 3.0 V,
VCOM = Open,		 See Figure 18 25°C 4.3 V –20 5 20 nA
Full –90 90
ICOM(ON) COM
ON leakage
current		 VNO or VNC = Open,
VCOM = 0.3 V,
or
VNO or VNC = Open,
VCOM = 3.0 V,		 See Figure 18 25°C 4.3 V –20 5 20 nA
Full –90 90
DIGITAL CONTROL INPUTS (IN1-2, IN3-4)(2)
VIH Input logic high Full 4.3 V 1.5 4.3 V
VIL Input logic low Full 4.3 V 0 1 V
IIH, IIL Input leakage current VIN = 3.6 V or 0 25°C 4.3 V 0.5 10 nA
Full 50
DYNAMIC
tON Turn-on time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 4.3 V 17 23 ns
Full 25
tOFF Turn-off time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 4.3 V 12 32 ns
Full 35
tBBM Break-before-make time VNC = VNO = VCC,
RL = 50 Ω,		 CL = 35 pF 25°C 4.3 V 2 9 30 ns
Full 1 35
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF 25°C 4.3 V 139 pC
CNC(OFF),
CNO(OFF)		 NC, NO
off
capacitance		 VNC or VNO = VCC or GND,
Switch OFF,		 See Figure 19 25°C 4.3 V 50 pF
CNC(ON),
CNO(ON)		 NC, NO
ON capacitance		 VNC or VNO = VCC or GND,
Switch OFF,		 See Figure 19 25°C 4.3 V 160 pF
CCOM(ON) COM
ON capacitance		 VCOM = VCC or GND,
Switch ON,		 See Figure 19 25°C 4.3 V 160 pF
CI Digital input capacitance VI = VCC or GND 25°C 4.3 V 2.5 pF
BW Bandwidth RL = 50 Ω, Switch ON 25°C 4.3 V 35 MHz
OISO OFF isolation RL = 50 Ω,
f = 100 kHz,		 Switch OFF 25°C 4.3 V –71 dB
XTALK Crosstalk RL = 50 Ω,
f = 100 kHz,		 Switch ON 25°C 4.3 V –73 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,
VCOM = GND to VCC		 f = 20 Hz to 20 kHz 25°C 4.3 V 0.003%
SUPPLY
ICC Positive supply current VI = VCC or GND, Switch ON or OFF 25°C 4.3 V 0.15 0.4 μA
Full 1.2
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.10 Typical Characteristics

ron_vcom_165_cds225.gifFigure 1. Ron vs VCOM (VCC = 1.65 V)
ron_vcom_30_cds225.gifFigure 3. Ron vs VCOM (VCC = 3 V)
ron_vcom_cds225.gifFigure 5. Ron vs VCOM (All Voltages)
ton_toff_suppvolt_cds225.gifFigure 7. tON and tOFF vs Supply Voltage (TA = 25°C)
bandwidth_cds225.gifFigure 9. Bandwidth
crsstlk_cds225.gifFigure 11. Crosstalk
thd_freq_25_cds225.gif
Figure 13. Total Harmonic Distortion vs Frequency
(VCC = 2.5 V)
thd_freq_43_cds225.gifFigure 15. Total Harmonic Distortion vs Frequency (VCC = 4.3 V)
ron_vcom_23_cds225.gifFigure 2. Ron vs VCOM (VCC = 2.3 V)
ron_vcom_43_cds225.gifFigure 4. Ron vs VCOM (VCC = 4.3 V)
qc_vcom_cds225.gifFigure 6. Charge Injection (QC) vs VCOM (TA = 25°C)
ton_toff_ta_cds225.gifFigure 8. tON and tOFF vs Temperature (VCC = 4.3 V)
offiso_cds225.gifFigure 10. OFF Isolation
thd_freq_18_cds225.gifFigure 12. Total Harmonic Distortion vs Frequency
(VCC = 1.8 V)
thd_freq_33_cds225.gif
Figure 14. Total Harmonic Distortion vs Frequency
(VCC = 3.3 V)