SCDS263E September   2009  – July 2024 TS3USB221E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Dynamic Electrical Characteristics, VCC = 3.3 V ±10%
    7. 5.7  Dynamic Electrical Characteristics, VCC = 2.5 V ±10%
    8. 5.8  Switching Characteristics, VCC = 3.3 V ±10%
    9. 5.9  Switching Characteristics, VCC = 2.5 V ±10%
    10. 5.10 Typical Characteristics
  7.   Parameter Measurement Information
  8. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Low Power Mode
    4. 6.4 Device Functional Modes
  9. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  11. 9 Revision History
  12. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • VCC operation of 2.3V to 3.6V
  • Switch I/OS accept signals up to 5.5V
  • 1.8V compatible control-pin inputs
  • Low-power mode when OE is disabled (1μA)
  • rON = 6Ω maximum
  • ΔrON = 0.2Ω typical
  • CIO(ON) = 7pf maximum
  • Low power consumption (30μA maximum)
  • ESD performance tested:
    • 7000V human body model per JEDEC JS-001
    • 1000V charged-device model per JEDEC JS-002
  • ESD performance I/O port to GND:
    • 12kV human body model (JEDEC JS-001)
    • ±7kV contact discharge (IEC 61000-4-2)
  • High bandwidth (1GHz typical)