SCDS337F December   2012  – June 2019 TS3USB3000

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Functional Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dynamic Characteristics
    7. 6.7 Timing Requirements
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Low Power Mode
      2. 8.3.2 Overvoltage Protection When 9-V Short to D+/– Pin
      3. 8.3.3 Pin Leakage
    4. 8.4 Device Functional Modes
      1. 8.4.1 High Impedance Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Option Addendum
      1. 13.1.1 Packaging Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

TA = –40°C to +85°C, Typical values are at VCC = 3.3 V, TA = 25°C, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MHL SWITCH
 RON ON-state resistance VCC = 2.7 V VI/O = 1.65 V, ION = –8 mA 5.7 9   Ω
VCC = 2.3 V VI/O = 1.65 V, ION = –8 mA 5.7 9.5
ΔRON ON-state resistance match between + and – paths VCC = 2.3 V VI/O = 1.65 V, ION = –8 mA 0.1   Ω 
RON (FLAT)  ON-state resistance flatness  VCC = 2.3 V VI/O = 1.65 V to 3.45 V, ION = –8 mA 1   Ω 
IOZ OFF leakage current VCC = 4.8 V Switch OFF, VMHL± = 1.65 V to 3.45 V,
VD± = 0 V		 –2 2 µA
IOFF Power-off leakage current VCC = 0 V Switch ON or OFF, VMHL± = 1.65 V to 3.45 V,
VD± = NC		 –10 10 µA
ION ON leakage current VCC = 4.8 V Switch ON, VMHL± = 1.65 V to 3.45 V,
VD± = NC		 –2 2 µA
VCC = 2.3 V Switch ON, VMHL± = 1.65 V to 3.45 V,
VD± = NC		 –125 125
USB SWITCH
RON ON-state resistance VCC = 2.3 V VI/O = 0.4 V, ION = –8 mA    4.6 7.5   Ω 
ΔRON ON-state resistance match between + and – paths VCC = 2.3 V VI/O = 0.4 V, ION = –8 mA 0.1   Ω 
RON (FLAT)  ON-state resistance flatness  VCC = 2.3 V VI/O = 0 V to 0.4 V, ION = –8 mA 1   Ω 
IOZ OFF leakage current VCC = 4.8 V Switch OFF, VUSB± = 0 V to 3.6 V, VD± = 0 V –2 2 µA
IOFF Power-off leakage current VCC = 0 V Switch ON or OFF, VUSB± = 0 V to 3.6 V,
VD± = NC		 –10 10 µA
ION ON leakage current VCC = 4.8 V Switch ON, VUSB± = 0 V to 3.6 V,
VD± = NC		 –2 2 µA
VCC = 2.3 V Switch ON, VUSB± = 0 V to 3.6 V,
VD± = NC		 –125 125
DIGITAL CONTROL INPUTS (SEL, OE)
VIH Input logic high VCC = 2.3 V to 4.8 V 1.3 V
VIL Input logic low VCC = 2.3 V to 4.8 V 0.6 V
IIN Input leakage current VCC = 4.8 V, VI/O = 0 V to 3.6 V, VIN = 0 to 4.8 V –10 10 μA