SCDS165F MAY   2004  – January 2019 TS5A23157

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 2.5-V Supply
    8. 6.8 Electrical Characteristics for 1.8-V Supply
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12.1.1 Device Nomenclature

Table 2. Parameter Description

SYMBOL DESCRIPTION
VCOM Voltage at COM
VNC Voltage at NC
VNO Voltage at NO
ron Resistance between COM and NC or COM and NO ports when the channel is ON
Δron Difference of ron between channels
ron(flat) Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under worst-case input and output conditions
INO(OFF) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case input and output conditions
INC(ON) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output (COM) being open
INO(ON) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) being open
ICOM(ON) Leakage current measured at the COM port, with the corresponding channel (NO to COM or NC to COM) in the ON state and the output (NC or NO) being open
VIH Minimum input voltage for logic high for the control input (IN)
VIL Minimum input voltage for logic low for the control input (IN)
VIN Voltage at IN
IIH, IIL Leakage current measured at IN
tON Turnon time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog outputs (COM/NC/NO) signal when the switch is turning ON.
tOFF Turnoff time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog outputs (COM/NC/NO) signal when the switch is turning OFF.
tBBM Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or COM) output. This is measured in coulombs (C) and measured by the total charge induced due to switching of the control input. Charge injection, QC = CL× ΔVO, CL is the load capacitance and ΔVO is the change in analog output voltage.
CNC(OFF) Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF) Capacitance at the NO port when the corresponding channel (NC to COM) is OFF
CNC(ON) Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON) Capacitance at the NO port when the corresponding channel (NC to COM) is ON
CCOM(ON) Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
CIN Capacitance of IN
OISO OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state. OFF isolation, OISO = 20 LOG (VNC/VCOM) dB, VCOM is the input and VNC is the output.
XTALK Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC). This is measured at a specific frequency and in dB. Crosstalk, XTALK = 20 log (VNC1/VNO1), VNO1 is the input and VNC1 is the output.
BW Bandwidth of the switch. This is the frequency where the gain of an ON channel is –3 dB below the dc gain. Gain is measured from the equation, 20 log (VNC/VCOM) dB, where VNC is the output and VCOM is the input.
I+ Static power-supply current with the control (IN) pin at V+ or GND
ΔI+ This is the increase in I+ for each control (IN) input that is at the specified voltage, rather than at V+ or GND.

Table 3. Summary of Characteristics

CONFIGURATION 2:1 MULTIPLEXER/DEMULTIPLEXER
(2 × SPDT)
Number of channels 2
ON-state resistance (ron) 10 Ω
ON-state resistance match between channels (Δron) 0.15 Ω
ON-state resistance flatness (ron(flat)) 4 Ω
Turnon/turnoff time (tON/tOFF) 5.7 ns/3.8 ns
Break-before-make time (tBBM) 0.5 ns
Charge injection (QC) 7 pC
Bandwidth (BW) 220 MHz
OFF isolation (OSIO) –65 dB at 10 MHz
Crosstalk 9XTALK) –66 dB at 10 MHz
Total harmo nic distortion (THD) 0.01%
Leakage current (ICOM(OFF)/INC(OFF)) ±1 µA
Package options 10-pin DGS and RSE