SCDS165F MAY   2004  – January 2019 TS5A23157

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 2.5-V Supply
    8. 6.8 Electrical Characteristics for 1.8-V Supply
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.8 Electrical Characteristics for 1.8-V Supply

V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS TA V+ MIN TYP(1) MAX UNIT
ANALOG SWITCH
VCOM, VNO, VNC Analog signal range 0 V+ V
ron ON-state resistance 0 ≤ VNO or VNC  ≤ V+,
ICOM = –4 mA,		 Switch ON,
see Figure 9 		Full 1.65 V 140 Ω
-40 to 125°C 180
Δron ON-state resistance
match between channels		 VNO or VNC = 1.15 V,
ICOM = –4 mA,		 Switch ON,
see Figure 9 		25°C 1.65 V 1 Ω
ron(flat) ON-state resistance flatness 0 ≤ VNO or VNC  ≤ V+,
ICOM = –4 mA,		 Switch ON,
see Figure 9 		25°C 1.65 V 110 Ω
INC(OFF),
INO(OFF) 		NC, NO
OFF leakage current		 VNC or VNO = 0 to V+,
VCOM = 0 to V+,		 Switch OFF,
see Figure 10 		25°C 1.95 V –1 0.05 1 µA
Full –1 1
INC(ON),
INO(ON) 		NC, NO
ON leakage current		 VNC or VNO = 0 to V+,
VCOM = Open,		 Switch ON,
see Figure 10 		25°C 1.95 V –0.1 0.1 µA
Full –1 1
ICOM(ON) COM
ON leakage current		 VNC or VNO = Open,
VCOM = 0 to V+,		 Switch ON,
see Figure 10 		25°C 1.95 V –0.1 0.1 µA
Full –1 1
DIGITAL INPUTS (IN12, IN2)(2)
VIH Input logic high Full V+ × 0.75 V
VIL Input logic low Full V+ × 0.25 V
IIH, IIL Input leakage current VIN = 5.5 V or 0 25°C 1.95 V –1 0.05 1 µA
Full –1 1
DYNAMIC
tON Turnon time VNC = GND and VNO = V+
or
VNC = V+ and VNO = GND,		 RL = 500 Ω,
CL = 50 pF,
see Figure 12 		Full 1.65 V to
1.95 V		 7 24 ns
-40 to 125°C 5.5 27 ns
tOFF Turnoff time VNC = GND and VNO = V+
or
VNC = V+ and VNO = GND,		 RL = 500 Ω,
CL = 50 pF,
see Figure 12 		Full 1.65 V to
1.95 V		 3 13 ns
-40 to 125°C 2 16
tBBM Break-before-make time VNC = VNO = V+/2,
RL = 50 Ω,		 CL = 35 pF,
see Figure 13 		Full 1.65 V to
1.95 V		 0.5 ns
BW Bandwidth RL = 50 Ω, Switch ON,
see Figure 14 		25°C 1.8 V 220 MHz
OISO OFF isolation RL = 50 Ω,
f = 10 MHz,		 Switch OFF,
see Figure 15 		25°C 1.8 V –60 dB
XTALK Crosstalk RL = 50 Ω,
f = 10 MHz,		 Switch ON,
see Figure 16 		25°C 1.8 V –66 dB
THD Total harmonic
distortion		 RL = 600 Ω,
CL = 50 pF,		 f = 600 Hz to
20 kHz,
see Figure 18 		25°C 1.8 V 0.015%
SUPPLY
I+ Positive supply
current		 VIN = V+ or GND, Switch ON or OFF 25°C 1.95 V 1 µA
Full 10
ΔI+ Change in
supply current		 VIN = V+ – 0.6 V Full 1.95 V 500 µA
(1) TA = 25°C.
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.