SLDS251A
December 2019 – May 2022
TUSS4470
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Power-Up Characteristics
6.6
Transducer Drive
6.7
Receiver Characteristics
6.8
Echo Interrupt Comparator Characteristics
6.9
Digital I/O Characteristics
6.10
Switching Characteristics
6.11
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Excitation Power Supply (VDRV)
7.3.2
Burst Generation
7.3.2.1
Burst Generation Diagnostics
7.3.3
Direct Transducer Drive
7.3.4
Analog Front End
7.4
Device Functional Modes
7.5
Programming
7.6
Register Maps
7.6.1
REG_USER Registers
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Transducer Drive Configuration Options
8.2.1.1
Design Requirements
8.2.1.2
Detailed Design Procedure
8.2.1.2.1
Transducer Driving Voltage
8.2.1.2.2
Transducer Driving Frequency
8.2.1.2.3
Transducer Pulse Count
8.2.1.3
Application Curves
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
11
Device and Documentation Support
11.1
Receiving Notification of Documentation Updates
11.2
Support Resources
11.3
Trademarks
11.4
Electrostatic Discharge Caution
11.5
Glossary
12
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
RTJ|20
MPQF156F
Thermal pad, mechanical data (Package|Pins)
RTJ|20
QFND016S
Orderable Information
slds251a_oa
slds251a_pm
6.6
Transducer Drive
over operating free-air temperature range, V
VPWR
, V
VDRV
and V
VDD
recommended voltage range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
HS_FET
High-side MOSFET on-resistance
T
A
=+105°C
30
Ω
R
LS_FET
Low-side MOSFET on-resistance
T
A
=+105°C
20
Ω