SLUSAT7G November   2011  – July 2024 UCC27211

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 Undervoltage Lockout (UVLO)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Threshold Type
        2. 7.2.2.2 VDD Bias Supply Voltage
        3. 7.2.2.3 Peak Source and Sink Currents
        4. 7.2.2.4 Propagation Delay
        5. 7.2.2.5 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
    3. 9.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DRM|8
  • DPR|10
  • DDA|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The UCC27211 driver is based on the popular UCC27201 MOSFET drivers, but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 3.7A source and 4.5A sink, thereby allowing for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure is now able to directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a maximum rating of 20V.

The switching node (HS pin) can handle –(24 – VDD) V maximum which allows the high-side channel to be protected from inherent negative voltages caused parasitic inductance and stray capacitance. UCC27211 (TTL inputs) has increased input hysteresis allowing for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 4 ns between the turnon and turnoff of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes.

Undervoltage lockout is provided for both the high-side and the low-side drivers providing symmetric turnon and turnoff behavior and forcing the outputs low if the drive voltage is below the specified threshold.

Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
UCC27211 D (SOIC 8) 4.9mm × 3.9mm
DDA (PowerPAD 8) 4.9mm × 3.9mm
DPR (WSON 10) 4.0mm × 4.0mm
DRM (VSON 8)
(1) For all available packages, see the orderable addendum at the end of the data sheet.