SLUSCO1B June   2017  – July 2024 UCC27212

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 Undervoltage Lockout (UVLO)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
      1. 9.2.1 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11 Revision History

Changes from Revision A (April 2018) to Revision B (July 2024)

  • Changed document title to reflect the device's key features. Go
  • Changed several specifications to reflect the device characteristics.Go
  • Changed Features section: 1) Changed sink/source current to use exact typical specification, no change in actual device specification (From: 4-A/4-A To: 3.7-A/4.5-A). 2) Changed TJ to match improved device specification (From: Specified from -40°C to +140°C. To: Specified from -40°C to +150°C junction temperature range). Go
  • Updated Applications section with list of top 5 typical applications.Go
  • Changed Description section: 1) Changed peak currents (From: 4-A source and 4-A sink. To: 3.7A source and 4.5A sink). 2) Changed 5-V turn-off UVLO (From: 5-V UVLO. To: 5-V turn-off UVLO). 3) Changed format for package name from WSON (10) to DPR (WSON, 10). 4) Changed HS pin tolerance to reflect specification in Electrical Characteristics table (From: -18V. To: -(24V-VDD)). 5) Updated propagation delay plot. Go
  • Updated Pin Functions table to remove DDA and DRM packages, since UCC27212 is only available in DPR package.Go
  • Updated Recommended Operating Conditions: Operating Junction Temperature maximum changed from 140°C to 150°C.Go
  • Updated Thermal Information section to reflect device characteristics. Go
  • Updated Electrical Characteristics and Switching Characteristics tables to remove specifications for 6.8V VDD, leaving the specifications for 12V VDD test condtion, as typically done in gate driver datasheets. Go
  • Updated Supply Currents specifications in the Electrical Characteristics table: 1) Minimum specification removed for IDD, IDDO, IHB and IHBO. 2) IDD typical changed (From: 0.085mA. To: 0.11mA). 3) IDDO typical changed (From: 2.5mA. To: 1.4mA). 4) IDDO maximum changed (From: 6.5mA. To: 3mA. 5) IHBO typical changed (From: 2.5mA. To: 1.3mA). 6) IHBO maximum changed (From: 5.1mA. To: 3mA). 8) IHBS test condition changed to match VHS maximum recommended operating conditions (From: 115V. To: 100V). 9) IHBSO typical changed (From: 0.07mA. To: 0.03mA). 10) IHBSO maximum changed (From: 1.2mA. To: 1mA). Go
  • Updated Bootstrap diode specifications in the Electrical Characteristics table: 1) VF maximum changed (From: 0.8V. To: 0.85V). 2) VFI typical changed (From: 0.85V. To: 0.9V), and maximum changed (From: 0.95V. To: 1.05V). 3) RD test conditions changed (From: 100mA and 80mA. To: 180mA and 160mA). 4) RD typical changed (From: 0.5Ω. To: 0.55Ω). Go
  • Updated LO/HO Gate Driver specifications in the Electrical Characteristics table: 1) Minimum specification removed for VLOL, VLOH, VHOL, VHOH. 2) VLOL and VHOL typical changed (From 0.1V. To 0.07V). 3) VLOH and VHOH typical changed (From: 0.16V. To: 0.11V).Go
  • Updated Propagation Delays specifications in the Switching Characteristics table: 1) Changed TDLFF and TDHFF typicals (From: 16ns. To: 19ns). Updated Output Rise and Fall Time specifications in the Switching Characteristis table: 1) tR with 1000pF CLOAD changed (From: 7.8ns typical. To: 7.2ns typical). 2) tF with 1000pF CLOAD changed (From: 6ns typical. To: 5.5ns typical). 3) tR with 1uF CLOAD changed (From: 0.36us typical. To: 0.27us typical). 4) tF with 0.1uF CLOAD changed (From: 0.20us typical. To: 0.16us typical). Go
  • Updated Miscellaneous specifications in the Switching Characteristics table: tIN_PW maximum changed (From: 100ns. To: 40ns).Go
  • Updated all plots in Typical Characteristics section to reflect the typical specification of the device. Go
  • Changed typical specifications mentioned in the Overview section to match the device specifications in the Electrical Characteristics table.Go
  • Changed Input Stages section to match the input pulldown resistance typical specification in the electrical characteristics table (From: 70kΩ. To: 68kΩ). Go
  • Changed Undervoltage Lockout (UVLO) section to VHB UVLO hysteresis to match electrical characteristics table (From: 0.4V. To: 0.3V).Go
  • Changed application curves to display propagation delay and rise/fall time plots. Go

Changes from Revision * (June 2017) to Revision A (April 2018)

  • Changed From: 5-V to 17-V VDD Operating Range, (20-V ABS Maximum) To: 7-V to 17-V VDD Operating Range, (20-V ABS Maximum)Go