11 Revision History
Changes from Revision * (July 2017) to Revision A (July 2024)
- Changed document title to reflect the device's key features. Go
- Changed several specifications to reflect the device
characteristics. Deleted specifications for 6.8V. Left only specifications for
12V as is typical for all half-bridge drivers.Go
- Updated Features section: 1) Deleted HBM and CDM ESD classification
level to follow latest TI data sheet standards. 2) Changed junction temperature
range spec (From: -40°C to 140°C. To: -40°C to 150°C). 3) Changed sink/source
current to use exact typical specification, no change in actual device
specification (From: "4-A/4-A". To: "3.7-A/4.5-A"). 4) Updated typo on VDD
operating range, no change in actual device specification (From 5-V to 17-V. To:
7-V to 17-V). 5) Deleted 0.9-Ω Pullup and Pulldown Resistance since it is not
specified in the Electrical Characteristics table. Go
- Updated Applications section with list of top 5 typical
applications.Go
- Changed Description section: 1) Changed peak currents (From: 4-A
source and 4-A sink. To: 3.7A source and 4.5A sink). 2) Deleted and pullup and
pulldown resistance is 0.9Ω since this parameter is not specified. 3) Changed
From: 100-V rated bootstrap diode To: 120-V rated bootstrap diode. 3) Changed
device information table body size, no change in actual package (From: SOIC8
(powerpad) package, 5mm x 6mm body size. To: DDA (PowerPADtm SOIC, 8) package,
4.9mm x 3.9mm body size. 4) Updated propagation delay plot. 5) Changed HS abs
max to reflect specification in Absolute Maximum table (From: -18V. To:
-(24V-VDD)).Go
- Updated Recommended Operating Conditions: Operating Junction
Temperature maximum changed from 140°C to 150°C.Go
- Updated Thermal Information section to reflect device
characteristics. Go
- Updated Electrical Characteristics and Switching Characteristics
tables to remove specifications for 6.8V VDD, leaving the specifications for 12V
VDD test condtion, as typically done in gate driver datasheets. Go
- Updated Supply Currents specifications in the Electrical
Characteristics table: 1) Minimum specification removed for IDD,
IDDO, IHB and IHBO. 2) IDD
typical changed (From: 0.085mA. To: 0.11mA). 3) IDDO typical changed
(From: 2.5mA. To: 1.4mA). 4) IDDO maximum changed (From: 6.5mA. To:
3mA. 5) IHBO typical changed (From: 2.5mA. To: 1.3mA). 6)
IHBO maximum changed (From: 5.1mA. To: 3mA). 8) IHBS
test condition changed to match VHS maximum recommended operating
conditions (From: 115V. To: 100V). 9) IHBSO typical changed (From:
0.07mA. To: 0.03mA). 10) IHBSO maximum changed (From: 1.2mA. To:
1mA). Go
- Updated Bootstrap diode specifications in the Electrical
Characteristics table: 1) VF maximum changed (From: 0.8V. To: 0.85V).
2) VFI typical changed (From: 0.85V. To: 0.9V), and maximum changed
(From: 0.95V. To: 1.05V). 3) RD test conditions changed (From: 100mA
and 80mA. To: 180mA and 160mA). 4) RD typical changed (From: 0.5Ω.
To: 0.55Ω). Go
- Updated LO/HO Gate Driver specifications in the Electrical
Characteristics table: 1) Minimum specification removed for VLOL,
VLOH, VHOL, VHOH. 2) VLOL and
VHOL typical changed (From 0.1V. To 0.07V). 3) VLOH
and VHOH typical changed (From: 0.16V. To: 0.11V).Go
- Updated Propagation Delays specifications in the Switching
Characteristics table: 1) Changed TDLFF and TDHFF typicals
(From: 16ns. To: 19ns). Go
- Updated Output Rise and Fall Time specifications in the Switching
Characteristis table: 1) tR with 1000pF CLOAD changed
(From: 7.8ns typical. To: 7.2ns typical). 2) tF with 1000pF
CLOAD changed (From: 6ns typical. To: 5.5ns typical). 3)
tR with 1uF CLOAD changed (From: 0.36us typical. To:
0.27us typical). 4) tF with 0.1uF CLOAD changed (From:
0.20us typical. To: 0.16us typical). Go
- Updated Miscellaneous specifications in the Switching
Characteristics table: tIN_PW maximum changed (From: 100ns. To:
40ns).Go
- Updated all plots in Typical Characteristics section to reflect the
typical specification of the device. Go
- Changed typical specifications mentioned in the Overview section to
match the device specifications in the Electrical Characteristics
table.Go
- Changed Input Stages section to match the input pulldown resistance
typical specification in the electrical characteristics table (From: 70kΩ. To:
68kΩ). Go
- Changed Undervoltage Lockout (UVLO) section to VHB UVLO hysteresis
to match electrical characteristics table (From: 0.4V. To:
0.3V).Go
- Changed application curves to display propagation delay and
rise/fall time plots. Go