SLUSE21B June   2020  – April 2022 UCC27288

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Start-up and UVLO
      2. 7.3.2 Input Stages
      3. 7.3.3 Level Shifter
      4. 7.3.4 Output Stage
      5. 7.3.5 Negative Voltage Transients
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select Bootstrap and VDD Capacitor
        2. 8.2.2.2 External Bootstrap Diode and Series Resistor
        3. 8.2.2.3 Estimate Driver Power Losses
        4. 8.2.2.4 Selecting External Gate Resistor
        5. 8.2.2.5 Delays and Pulse Width
        6. 8.2.2.6 VDD and Input Filter
        7. 8.2.2.7 Transient Protection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.4 Output Stage

The output stages are the interface from level shifter output to the power MOSFETs in the power train. High slew rate, low resistance, and high peak current capability of both outputs allow for efficient switching of the power MOSFETs. The low-side output stage is referenced to VSS and the high-side is referenced to HS. The device output stages are robust to handle harsh environment, such as –2 V transient for 100 ns. The device can also sustain positive transients on the outputs. The device output stages feature a pull-up structure which delivers the highest peak source current when it is most needed, during the Miller plateau region of the power switch turn on transition. The output pull-up and pull-down structure of the device is totem pole NMOS-PMOS structure.