SLUSCE9B June   2017  – March 2020 UCC27712

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Typical Propagation Delay Comparison
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dynamic Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD and Under Voltage Lockout
      2. 7.3.2 Input and Output Logic Table
      3. 7.3.3 Input Stage
      4. 7.3.4 Output Stage
      5. 7.3.5 Level Shift
      6. 7.3.6 Low Propagation Delays and Tightly Matched Outputs
      7. 7.3.7 Parasitic Diode Structure
    4. 7.4 Device Functional Modes
      1. 7.4.1 Minimum Input Pulse Operation
      2. 7.4.2 Output Interlock and Dead Time
      3. 7.4.3 Operation Under 100% Duty Cycle Condition
      4. 7.4.4 Operation Under Negative HS Voltage Condition
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Selecting HI and LI Low Pass Filter Components (RHI, RLI, CHI, CLI)
        2. 8.2.2.2 Selecting Bootstrap Capacitor (CBOOT)
        3. 8.2.2.3 Selecting VDD Bypass/Holdup Capacitor (CVDD) and Rbias
        4. 8.2.2.4 Selecting Bootstrap Resistor (RBOOT)
        5. 8.2.2.5 Selecting Gate Resistor RON/ROFF
        6. 8.2.2.6 Selecting Bootstrap Diode
        7. 8.2.2.7 Estimate the UCC27712 Power Losses (PUCC27712)
        8. 8.2.2.8 Estimating Junction Temperature
        9. 8.2.2.9 Operation With IGBT's
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.1 Design Requirements

Table 4 shows the reference design parameters for the example application: UCC27712 driving 650-V MOSFETs in a high side-low side configuration.

Table 4. UCC27712 Design Requirements

PARAMETER VALUE UNIT
Power transistor IPB65R190CFD -
VDD 12 V
Input signal amplitude 3.3 V
Switching frequency (fSW) 100 kHz
DC link voltage (VHV) 400 V