SLUSEV2C June   2022  – March 2023 UCC28C50-Q1 , UCC28C51-Q1 , UCC28C52-Q1 , UCC28C53-Q1 , UCC28C54-Q1 , UCC28C55-Q1 , UCC28C56H-Q1 , UCC28C56L-Q1 , UCC28C57H-Q1 , UCC28C57L-Q1 , UCC28C58-Q1 , UCC28C59-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Description
        1. 8.3.1.1 COMP
        2. 8.3.1.2 FB
        3. 8.3.1.3 CS
        4. 8.3.1.4 RT/CT
        5. 8.3.1.5 GND
        6. 8.3.1.6 OUT
        7. 8.3.1.7 VDD
        8. 8.3.1.8 VREF
      2. 8.3.2  Undervoltage Lockout
      3. 8.3.3  ±1% Internal Reference Voltage
      4. 8.3.4  Current Sense and Overcurrent Limit
      5. 8.3.5  Reduced-Discharge Current Variation
      6. 8.3.6  Oscillator Synchronization
      7. 8.3.7  Soft Start
      8. 8.3.8  Enable and Disable
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Voltage Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Primary-to-Secondary Turns Ratio of the Flyback Transformer (NPS)
        2. 9.2.2.2  Primary Magnetizing Inductance of the Flyback Transformer (LM)
        3. 9.2.2.3  Number of Turns of the Flyback Transformer Windings
        4. 9.2.2.4  Current Sense Resistors (R24, R25) and Current Limiting
        5. 9.2.2.5  Primary Clamp Circuit (D7, D1, D3, R2, R28) to Limit Voltage Stress
        6. 9.2.2.6  Primary-Side Current Stress and Input Capacitor Selection
        7. 9.2.2.7  Secondary-Side Current Stress and Output Capacitor Selection
        8. 9.2.2.8  VDD Capacitors (C12, C18)
        9. 9.2.2.9  Gate Drive Network (R14, R16, Q6)
        10. 9.2.2.10 VREF Capacitor (C18)
        11. 9.2.2.11 RT/CT Components (R12, C15)
        12. 9.2.2.12 HV Start-Up Circuitry for VDD (Q1, Q2, D2, D4, D6, D8, R5)
        13. 9.2.2.13 Desensitization to CS-pin Noise by RC Filtering, Leading-Edge Blanking, and Slope Compensation
        14. 9.2.2.14 Voltage Feedback Compensation
          1. 9.2.2.14.1 Power Stage Gain, Poles, and Zeroes
          2. 9.2.2.14.2 Compensation Components
          3. 9.2.2.14.3 Bode Plots and Stability Margins
          4. 9.2.2.14.4 Stability Measurements
      3. 9.2.3 Application Curves
    3. 9.3 PCB Layout Recommendations
      1. 9.3.1 PCB Layout Routing Examples
    4. 9.4 Power Supply Recommendations
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Related Links
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.1 Primary-to-Secondary Turns Ratio of the Flyback Transformer (NPS)

To start, we need to estimate the forward voltage (VF) of the output Schottky diode and the on-time of the MOSFET (tON_EST)

Equation 8. V F = 0.5 V
Equation 4. t O N _ E S T = D V I N _ M I N f S W = 0.80 42.5   k H z = 18.8   µ s

Next, estimate the transformer primary-to-secondary turns ratio

Equation 5. N P S = V I N _ M I N × t O N _ E S T ( 1 f S W - t O N _ E S T ) × ( V O U T + V F ) = 40   V × 18.8   µ s ( 1 42.5   k H z - 18.8   µ s ) × ( 15   V + 0.5   V ) = 10.3

Calculate the reverse withstand voltage of output rectifier diode during tON_EST

Equation 6. V S E C _ R E V = V O U T + V I N _ M A X N P S = 15   V + 1000   V 10.3 = 112   V

Calculate the (expected) drain-to-source voltage of the MOSFET during the off time

Equation 7. V D S _ O F F = V I N _ M A X + V O U T + V F × N P S = 1000   V + 15   V + 0.5   V × 10.3 = 1160   V

The switching MOSFET and output rectifier generally experience voltage ringing due to transformer leakage and parasitic capacitance. Based on VSEC_REV, a 200V-rated Schottky diode is chosen, so the secondary RC snubber can damp the voltage spike and ringing with reduced snubber power loss. Based on VDS_OFF, a 1.7kV-rated SiC MOSFET is chosen, so a higher breakdown voltage of the primary TVS diode clamping circuit can clamp the switching voltage stress caused by the transformer leakage with reduced clamping power loss. If VDS_OFF is too high, the turns ratio can be reduced by decreasing DVIN_MIN, but VSEC_REV will increase. Deciding which component voltage is more critical and iterate again if necessary.