SLUS652E March   2005  – April 2020 UCD8220

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1. 3.1 UCD8220 Typical Simplified Push-Pull Converter Application Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 CLK Input Time-Domain Digital Pulse Train
      2. 7.3.2 Current Sensing and Protection
      3. 7.3.3 Handshaking
      4. 7.3.4 Driver Output
      5. 7.3.5 Source and Sink Capabilities During Miller Plateau
      6. 7.3.6 Drive Current and Power Requirements
      7. 7.3.7 Clearing the Current-Limit Flag (CLF)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Selecting the ISET Resistor for Voltage Mode Control
        2. 8.2.2.2 Selecting the ISET Resistor for Voltage Mode Control with Voltage Feed Forward
        3. 8.2.2.3 Selecting the ISET Resistor for Peak Current Mode Control with Internal Slope Compensation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PWP|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.1 Layout Guidelines

In a MOSFET driver operating at high frequency, minimizing stray inductance to minimize overshoot, undershoot, and ringing is critical. The low output impedance of the drivers produces waveforms with high di/dt which tends to induce ringing in the parasitic inductances. Connecting the driver device close to the MOSFETs is advantageous. To reduce ringing, minimize the trace inductance from OUT 1 and OUT 2 to the MOSFET input. Connecting the PGND and AGND pins to the PowerPAD integrated circuit package with a thin trace is recommended. Ensuring that the voltage potential between these two pins does not exceed 0.3 V is critical. The use of schottky diodes on the outputs to the PGND and PVDD pins is recommended when driving gate transformers. See (3) in the Related Documentation section for a description of proper pad layout for the PowerPAD integrated circuit package.