SLUSFF2C September   2023  – December 2025 UCG28824 , UCG28826 , UCG28828

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Descriptions
      1. 7.3.1  HV - High Voltage Input
      2. 7.3.2  SW - Switch Node
      3. 7.3.3  GND – Ground Return
      4. 7.3.4  FLT - External Overtemperature Fault
      5. 7.3.5  FB ­­– Feedback
      6. 7.3.6  TR - Turns Ratio
      7. 7.3.7  IPK - Peak Current and Dithering
      8. 7.3.8  FCL - Frequency Clamp and Fault Response
      9. 7.3.9  CDX - CCM, Drive Strength, and X-cap Discharge
      10. 7.3.10 VCC - Input Bias
    4. 7.4 Feature Description
      1. 7.4.1  Self Bias and Auxless Sensing
      2. 7.4.2  Control Law
        1. 7.4.2.1 Valley Switching
        2. 7.4.2.2 Frequency Foldback
        3. 7.4.2.3 Burst Mode
        4. 7.4.2.4 Continuous Conduction Mode (CCM)
      3. 7.4.3  GaN HEMT Switching Capability
      4. 7.4.4  Soft Start
      5. 7.4.5  Frequency Clamp
      6. 7.4.6  Frequency Dithering
      7. 7.4.7  Slew Rate Control
      8. 7.4.8  Transient Peak Power Capability
      9. 7.4.9  X-Cap Discharge
      10. 7.4.10 Fault Protections
        1. 7.4.10.1 Brownout Protection
        2. 7.4.10.2 Short-Circuit Protection
        3. 7.4.10.3 Output Overvoltage Protection
        4. 7.4.10.4 Overpower Protection (OPP, LPS)
        5. 7.4.10.5 Overtemperature Protection
        6. 7.4.10.6 Open FB Protection
        7. 7.4.10.7 Error Codes for Protections
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Bulk Capacitor
        2. 8.2.2.2 Transformer Primary Inductance and Turns Ratio
        3. 8.2.2.3 Output Capacitor
        4. 8.2.2.4 Selection Resistors
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • REZ|12
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4.7 Slew Rate Control

The UCG2882x includes slew rate options for drain voltage reduction from switch node valley voltage to ground at the time of primary GaN HEMT turn-on. This GaN HEMT turn-on during valley switching happens at nearly zero current and incurs negligible additional losses with the slower turn-on due to slew rate control helping to meet various electromagnetic emission standards. Three slew rate options are available at 5V/ns, 7V/ns, and 10V/ns, which vary marginally based on the valley voltage, as shown in Figure 7-11.

UCG28824 UCG28826 UCG28828 GaN HEMT Turn-On Slew Rate Control Figure 7-11 GaN HEMT Turn-On Slew Rate Control

Select the required slew rate value using a resistor from CDX pin to GND as per values in Table 7-5. At the primary GaN HEMT turn-off instant, the increase in SW node voltage depends on IPK and total switch node capacitance CSW. A gate drive current controlled reduction in this turn-off slew rate can increase losses significantly. If a reduction in GaN HEMT turn-off slew rate is needed, add an additional capacitor from GaN HEMT drain (switch node) to GND to reduce the rate of increase in switch node voltage at this turn-off instant.