SBAS655F September   2014  – January 2020 AMC1304L05 , AMC1304L25 , AMC1304M05 , AMC1304M25

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics: AMC1304x05
    10. 7.10 Electrical Characteristics: AMC1304x25
    11. 7.11 Switching Characteristics
    12. 7.12 Insulation Characteristics Curves
    13. 7.13 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Analog Input
      2. 8.3.2 Modulator
      3. 8.3.3 Digital Output
    4. 8.4 Device Functional Modes
      1. 8.4.1 Fail-Safe Output
      2. 8.4.2 Output Behavior in Case of a Full-Scale Input
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Digital Filter Usage
    2. 9.2 Typical Applications
      1. 9.2.1 Frequency Inverter Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Isolated Voltage Sensing
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
      3. 9.2.3 What To Do and What Not To Do
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.10 Electrical Characteristics: AMC1304x25

All minimum and maximum specifications are at TA = –40°C to 125°C, LDOIN = 4.0 V to 18.0 V, DVDD = 3.0 V to 5.5 V, AINP = –250 mV to 250 mV, AINN = 0 V, and sinc3 filter with OSR = 256, unless otherwise noted. Typical values are at TA = 25°C, CLKIN = 20 MHz, LDOIN = 15.0 V, and DVDD = 3.3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUTS
VClipping  Maximum differential voltage input range
(AINP-AINN)		 ±312.5 mV
FSR Specified linear full-scale range
(AINP-AINN)		 –250 250 mV
VCM  Operating common-mode input range    –0.16 1.2 V
CID  Differential input capacitance 1 pF
IIB  Input bias current Inputs shorted to AGND –82 –60 –48 μA
RID  Differential input resistance 25 kΩ
IIO  Input offset current ±5 nA
CMTI Common-mode transient immunity 15 kV/μs
CMRR Common-mode rejection ratio fIN = 0 Hz,
VCM min ≤ VIN ≤ VCM max 		–98 dB
fIN from 0.1 Hz to 50 kHz,
VCM min ≤ VIN ≤ VCM max 		–98
BW Input bandwidth 1000 kHz
DC ACCURACY
DNL Differential nonlinearity Resolution: 16 bits –0.99 0.99 LSB
INL Integral nonlinearity(1) Resolution: 16 bits –4 ±1.5 4 LSB
EO  Offset error  Initial, at 25°C –100 ±25 100 µV
TCEO  Offset error thermal drift(2) –1.3 1.3 μV/°C
EG  Gain error  Initial, at 25°C –0.2% –0.05% 0.2%
TCEG  Gain error thermal drift(3) –40 ±20 40 ppm/°C
PSRR Power-supply rejection ratio LDOIN from 4 V to 18 V, at dc –110 dB
LDOIN from 4 V to 18 V,
from 0.1 Hz to 50 kHz 		–110
AC ACCURACY
SNR Signal-to-noise ratio fIN = 1 kHz 82 85 dB
SINAD Signal-to-noise + distortion fIN = 1 kHz 80 84 dB
THD Total harmonic distortion fIN = 1 kHz –90 –81 dB
SFDR Spurious-free dynamic range fIN = 1 kHz 81 90 dB
DIGITAL INPUTS/OUTPUTS
External Clock
fCLKIN  Input clock frequency 5 20 20.1 MHz
DutyCLKIN  Duty cycle 5 MHz ≤ fCLKIN ≤ 20.1 MHz 40% 50% 60%
CMOS Logic Family (AMC1304M25, CMOS with Schmitt Trigger)
IIN Input current DGND ≤ VIN ≤ DVDD –1 1 μA
CIN Input capacitance 5 pF
VIH High-level input voltage 0.7 × DVDD DVDD + 0.3 V
VIL Low-level input voltage –0.3 0.3 × DVDD V
CLOAD Output load capacitance fCLKIN = 20 MHz 30 pF
VOH High-level output voltage IOH = –20 µA DVDD – 0.1 V
IOH = –4 mA DVDD – 0.4 V
VOL Low-level output voltage IOL = 20 µA 0.1 V
IOL = 4 mA 0.4 V
LVDS Logic Family (AMC1304L25)(4)
VT Differential output voltage RLOAD = 100 Ω 250 350 450 mV
VOC Common-mode output voltage 1.125 1.23 1.375 V
VID Differential input voltage 100 350 600 mV
VIC Common-mode input voltage VID = 100 mV 0.05 1.25 3.25 V
II Receiver input current DGND ≤ VIN ≤ 3.3 V –24 0 20 µA
POWER SUPPLY
LDOIN LDOIN pin input voltage 4.0 15.0 18.0 V
VCAP VCAP pin voltage 3.45 V
ILDOIN LDOIN pin input current 5.3 6.5 mA
DVDD Controller-side supply voltage 3.0 3.3 5.5 V
IDVDD Controller-side supply current LVDS, RLOAD = 100 Ω 6.1 8.0 mA
CMOS, 3.0 V ≤ DVDD ≤ 3.6 V,
CLOAD = 5 pF		 2.7 4.0
CMOS, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 5 pF		 3.2 5.5
(1) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.
(2) Offset error drift is calculated using the box method as described by the following equation:
AMC1304L05 AMC1304L25 AMC1304M05 AMC1304M25 ec_eodrift_bas654.gif.
(3) Gain error drift is calculated using the box method as described by the following equation:
AMC1304L05 AMC1304L25 AMC1304M05 AMC1304M25 ec_egdrift_bas654.gif .
(4) For further information on electrical characteristics of LVDS interface circuits, see the TIA-644-A standard and design note Interface Circuits for TIA/EIA-644 (LVDS).