JAJSPL3 January   2023 BQ21080

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Thermal Information
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 Battery Charging Process
        1. 8.1.1.1 Trickle Charge
        2. 8.1.1.2 Precharge
        3. 8.1.1.3 Fast Charge
        4. 8.1.1.4 Termination
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Based Dynamic Power Management (VINDPM)
      2. 8.3.2  Dynamic Power Path Management Mode (DPPM)
      3. 8.3.3  Battery Supplement Mode
      4. 8.3.4  SYS Power Control (SYS_MODE bit control)
        1. 8.3.4.1 SYS Pulldown Control
      5. 8.3.5  SYS Regulation
      6. 8.3.6  ILIM Control
      7. 8.3.7  Protection Mechanisms
        1. 8.3.7.1 Input Overvoltage Protection
        2. 8.3.7.2 Battery Undervoltage Lockout
        3. 8.3.7.3 System Overvoltage Protection
        4. 8.3.7.4 System Short Protection
        5. 8.3.7.5 Battery Overcurrent Protection
        6. 8.3.7.6 Safety Timer and Watchdog Timer
        7. 8.3.7.7 Thermal Protection and Thermal Regulation
      8. 8.3.8  Pushbutton Wake and Reset Input
        1. 8.3.8.1 Pushbutton Wake or Short Button Press Functions
        2. 8.3.8.2 Pushbutton Reset or Long Button Press Functions
      9. 8.3.9  15-Second Timeout for HW Reset
      10. 8.3.10 Hardware Reset
      11. 8.3.11 Software Reset
      12. 8.3.12 Interrupt Indicator (/INT) Pin
      13. 8.3.13 External NTC Monitoring (TS)
        1. 8.3.13.1 TS Biasing and Function
      14. 8.3.14 I2C Interface
        1. 8.3.14.1 F/S Mode Protocol
    4. 8.4 Device Functional Modes
    5. 8.5 Register Maps
      1. 8.5.1 I2C レジスタ
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input (IN/SYS) Capacitors
        2. 9.2.2.2 TS
        3. 9.2.2.3 Recommended Passive Components
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 サード・パーティ製品に関する免責事項
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 用語集
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.5 Electrical Characteristics

VIN = 5V, VBAT = 3.6V. TJ =25°C unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT CURRENTS
IQ_IN Input supply quiescent current VBAT = 3.6V, VIN = 5V, Charge enabled, ICHG = 0mA, SYSREG = 4.5V 0.75

2

 mA
IQ_IN Input supply quiescent current VBAT = 3.6V, VIN = 5V, Charge enabled, ICHG = 0mA, SYSREG = Passthrough 0.660

1.5

 mA
ISLEEP_IN SLEEP input current VIN = 3.6V, VBAT = 3.7V

45

 µA
IQ_BAT Battery quiescent current VIN <VUVLO , VBAT =3.6V, Push-button function enabled, 0°C < TJ < 85°C 4

7.5

 µA
IBAT_SHUTDOWN Battery discharge current in Ship Mode VIN = 0V, Ship Mode, VBAT = 3.6V, Adapter Sense wake enabled.  30 nA
IBAT_SHIP Battery discharge current in Ship Mode VBAT = 3.6V, Push button function enabled (average current), 0°C < TJ < 85°C 3.2 4.5 µA
POWER-PATH MANAGEMENT AND INPUT
VIN_OP Input voltage operating range 3 5.5 V
VIN_UVLOZ Exit IN undervoltage lock-out IN rising 3 V
VIN_UVLO Enter IN undervoltage lock-out IN falling 2.7 V
VIN_LOWV IN voltage to start charging IN rising 3 3.15 V
VIN_LOWVZ IN voltage to stop charging IN falling 2.95 3.1 V
VIN_PORZ IN voltage threshold to enter shipmode IN falling 1.09 1.3 1.66 V
VSLEEPZ Exit sleep mode threshold IN rising, VIN - VBAT, VBAT= 4V 100 135 185 mV
VSLEEP Sleep mode threshold hysteresis IN falling, VIN - VBAT, VBAT= 4V 72 mV
VIN_OVP VIN overvoltage rising threshold IN rising 5.5 5.7 5.9 V
VIN_OV_HYS IN overvoltage hysteresis IN falling 125 mV
IBAT_OCP BATOCP(Reverse OCP only) VBAT = 3.6V, IBAT_OCP= 00 0.5 A
VBAT = 3.6V, IBAT_OCP= 01 1 A
VBAT = 3.6V, IBAT_OCP= 10 1.5 A
VBAT = 3.6V, IBAT_OCP= 11 Disabled A
VBSUP1 Enter supplement mode threshold VBAT = 3.6V, VBAT > VBUVLO, VSYS< VBAT-VBSUP1 40 mV
VBSUP2
 Exit supplement mode threshold VBAT > VBUVLO, VSYS>VBAT-VBSUP2 20 mV
ILIM
 Input Current Limit VIN = 5V, ILIM =50mA 40 50 60 mA
VIN = 5V, ILIM =100mA 80 90 98 mA
VIN = 5V, ILIM= 300mA 270 300 330 mA
VIN = 5V, ILIM= 500mA 450 475 498 mA
VIN = 5V, ILIM= 1050mA 995 1050 1100 mA
VINDPM_ACC VINDPM accuracy VINDPM target is not disabled -3 3 %
VINDPM Input voltage threshold when input current is reduced VINDPM target =4.2V 4.2 V
VDPPM SYS voltage threshold when charge current is reduced VBAT = 3.6V, VSYS = VDPPM + VBAT before charge current is reduced.  0.1 V
VSYS_REG_ACCURACY Programmable SYS regulation accuracy All settings, ISYS from 0-0.5A, VIN = VSYS_REG + VIN_MIN_TH, All settings except passthrough mode and battery tracking mode –3 3 %
ISYS = 100mA, VIN = VSYS_REG + VIN_MIN_TH, All settings except passthrough mode and battery tracking mode –2 2 %
VMINSYS Minimum SYS voltage when in battery tracking mode VBAT < 3.6V 3.8 V
VSYS_TRACK Voltage regulation threshold for SYS when VBAT >3.6V in battery tracking mode VBAT = 4V, VSYS = VBAT + VSYS_TRACK 225 mV
RSYS_PD SYS pull down resistance VSYS = 3.6V 25 Ω
BATTERY CHARGER
RON_BAT Battery FET on-resistance VBAT = 4.5V, IBAT =500mA 55 110 mΩ
RON_IN Input FET on-resistance IN = 5V, IIN = 1A 270

350

 mΩ
VREG_RANGE Typical BAT charge voltage regulation range 10mV steps, programmabe through I2C 3.5 4.65 V
VREG_ACC BAT charge voltage accuracy, summary for all settings All VBATREG settings, typical measurement at VBATREG = 4.2V –0.5 0.5 %
ICHG_RANGE Typical charge current regulation range VOUT > VLOWV 5

800

 mA
ICHG_ACC Charge current accuracy VIN = 5V, Fastcharge >=40mA –10 10 %
ICHG_ACC Charge current accuracy  Fastcharge current = 40mA 36 40 44 mA
ICHG_ACC Charge current accuracy  Fastcharge current = 630mA 567 630 693 mA
IPRECHG Typical pre-charge current, as percentage of ICHG VOUT < VLOWV 20 %
IPRECHG_ACC Precharge current accuracy Fastcharge current >=40mA –10 10 %
ITERM_ACC Termination current accuracy IBAT = 3mA (IFCHG = 30mA) Tj = 25°C –10 10 %
ITERM_ACC Termination current accuracy IBAT = 3mA (IFCHG = 30mA) Tj = 25°C 2.7 3.3 mA
VLOWV Pre-charge to fast-charge transition threshold VLOWVSEL = 3.0V, VBAT rising 2.9 3 3.1 V
VLOWV Pre-charge to fast-charge transition threshold VLOWVSEL = 2.8V, VBAT rising  2.7 2.8 2.9 V
VLOWV_HYS Battery LOWV hysteresis All settings 100 mV
VBUVLO Battery UVLO, VBAT falling BUVLO setting = b000 3 V
Battery UVLO, VBAT falling BUVLO setting = b011 2.8 V
Battery UVLO, VBAT falling BUVLO setting = b100 2.6 V
Battery UVLO, VBAT falling BUVLO setting = b101

2.4

V
Battery UVLO, VBAT falling BUVLO setting = b110

2.2

V
Battery UVLO, VBAT falling BUVLO setting = b111

2.0

 V
VBUVLO_HYS Battery UVLO hysteresis, VBAT rising Any BUVLO Setting, value above VBAT, VIN = 5V 110 150 190 mV
VBATPOR Battery only power up voltage, VBAT rising -40C < Tj < 125C 3.08 3.21 3.46 V
VRCH

Battery recharge threshold

 BAT falling, VRCH bit = 0  75 100 130 mV
BAT falling, VRCH bit = 1 175 200 230 mV
VBATSC Short on battery threshold for trickle charge, VBAT rising 1.6 1.8 2.0 V
VBATSC_HYS Battery short circuit voltage hysteresis 200 mV
IBATSC Trickle Charge Current  VBAT<VBATSC 8 mA
TERMPERATURE REGULATION AND TEMPERATURE SHUTDOWN
TREG Typical junction temperature regulation THERM_REG = 00 100 °C
TREG Typical junction temperature regulation THERM_REG = 11 Disabled
TSHUT_RISING Thermal shutdown rising threshold Temperature increasing 150 °C
TSHUT_FALLING Thermal shutdown falling threshold Temperature decreasing 135 °C
BATTERY NTC MONITOR
ITS_BIAS TS nominal bias current 36.5 38 39.5 µA
VT1_Entry Cold - 00 @ Approx. 0°C, default VIN = 5V 0.9575 1.0075 1.0575 V
VT5_Entry Cool - 00 @ Approx. 10°C, default VIN = 5V 0.6350 0.6700 0.7025 V
VT6_Entry Warm - 00 @ Approx. 45°C, default VIN = 5V 0.1730 0.1850 0.198 V
VT7_Entry Hot - 00 @ Approx. 60°C, default VIN = 5V 0.1050 0.1150 0.1250 V
VT1_Exit Cold - 00 @ Approx. 5°C, default VIN = 5V 0.7775 0.8200 0.8600 V
VT5_Exit Cool - 00 @ Approx. 15°C, default VIN = 5V 0.5225 0.5500 0.5775 V
VT6_Exit Warm - 00 @ Approx. 41°C, default VIN = 5V 0.2080 0.2200 0.235 V
VT7_Exit Hot - 00 @ Approx. 55°C, default VIN = 5V 0.1250 0.1350 0.1450 V
VTS_ENZ TS monitoring enable threshold VTSMR<VTS_ENZ for TS function to be enabled TS Rising, VIN = 5V 1.8 2.1 2.8 V
VTS_CLAMP TS maximum voltage clamp TS open-circuit (float), VIN = 5V 2.2 2.8 3.3 V
PUSH BUTTON TIMERS AND THRESHOLDS
ITSMR Adapter present  36.5 38 39.5 µA
ITSMR Battery only mode   60 µA
VTSMR TSMR voltage to detect a button press event, battery only mode 90 mV
VTSMR TSMR voltage to detect a button press event, adapter present  90 mV
tWAKE1 WAKE1 Timer. Time from TSMR low detection MR_WAKE1_TIMER = 0 300 ms
MR_WAKE1_TIMER = 1 1 s
tWAKE2 WAKE2 Timer. Time from TSMR low detection MR_WAKE2_TIMER = 0 2 s
MR_WAKE2_TIMER = 1 3 s
tRESET_WARN RESET_WARN Timer. Time prior to HW RESET MR_RESET_WARN = 0 0.9 1 1.1 s
tLPRESS Long Press timer. Time from button press detection to long press action.  MR_LPRESS = 00 4.5 5 5.5 s
MR_LPRESS = 01 9 10 11 s
MR_LPRESS = 10 13.5 15 16.5 s
MR_LPRESS = 11 18 20 22 s
tRESTART(AUTOWAKE) RESTART Timer. Time from HW Reset to SYS power up AUTOWAKE = 00 0.5 s
AUTOWAKE = 01 1 s
AUTOWAKE = 10 2 s
AUTOWAKE = 11 4 s
BATTERY CHARGING TIMERS
tMAXCHG Charge safety timer Programmable range 180 720 min
tPRECHG Precharge safety timer 0.25 * tMAXCHG
I2C INTERFACE
VIL Input low threshold level VPULLUP = 1.8V, SDA and SCL 0.4 V
VIH Input high threshold level VPULLUP = 1.8V, SDA and SCL 1.3 V
VOL Output low threshold level IL = 5mA, sink current, VPULLUP =1.8V 0.4 V
ILKG High-Level leakage current VPULLUP = 1.8V 1 µA
LOGIC PINS
VOL Output low threshold level IL = 5mA, sink current, VPULLUP =3.3V, /INT pin 0.4 V
ILKG High-Level leakage current VPULLUP = 3.3V,  /INT pin  1 µA