JAJSJH4D december   2010  – september 2020 BQ24133

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Device Comparison Table
  8. 7 Pin Configuration and Functions
    1.     Pin Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Battery Voltage Regulation
      2. 9.3.2  Battery Current Regulation
      3. 9.3.3  Battery Precharge Current Regulation
      4. 9.3.4  Input Current Regulation
      5. 9.3.5  Charge Termination, Recharge, And Safety Timers
      6. 9.3.6  Power Up
      7. 9.3.7  Input Undervoltage Lockout (UVLO)
      8. 9.3.8  Input Overvoltage/Undervoltage Protection
      9. 9.3.9  Enable and Disable Charging
      10. 9.3.10 System Power Selector
      11. 9.3.11 Converter Operation
      12. 9.3.12 Automatic Internal Soft-Start Charger Current
      13. 9.3.13 Charge Overcurrent Protection
      14. 9.3.14 Charge Undercurrent Protection
      15. 9.3.15 Battery Detection
        1. 9.3.15.1 Example
      16. 9.3.16 Battery Short Protection
      17. 9.3.17 Battery Overvoltage Protection
      18. 9.3.18 Temperature Qualification
      19. 9.3.19 MOSFET Short Circuit and Inductor Short Circuit Protection
      20. 9.3.20 Thermal Regulation and Shutdown Protection
      21. 9.3.21 Timer Fault Recovery
      22. 9.3.22 Charge Status Outputs
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inductor Selection
        2. 10.2.2.2 Input Capacitor
        3. 10.2.2.3 Output Capacitor
        4. 10.2.2.4 Input Filter Design
        5. 10.2.2.5 Input ACFET and RBFET Selection
        6. 10.2.2.6 Inductor, Capacitor, and Sense Resistor Selection Guidelines
      3. 10.2.3 Application Curve
    3. 10.3 System Examples
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 サード・パーティ製品に関する免責事項
    2. 13.2 ドキュメントの更新通知を受け取る方法
    3. 13.3 サポート・リソース
    4. 13.4 Trademarks
    5. 13.5 静電気放電に関する注意事項
    6. 13.6 用語集
  15. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10.2.2.5 Input ACFET and RBFET Selection

N-type MOSFETs are used as input ACFET(Q1) and RBFET(Q2) for better cost-effective and small-size solution, as shown in Figure 22. Normally, there is a total capacitance of 50 µH connected at PVCC node: 10-µF capacitor for buck converter of BQ24133 and 40-µF capacitor for system side. There is a surge current during Q1 turnon period when a valid adapter is inserted. Decreasing the turnon speed of Q1 can limit this surge current in desirable range by selecting a MOSFET with relative bigger CGD and/or CGS. If Q1 turns on too fast, we must add external CGD and/or CGS. For example, 4.7-nF CGD and 47-nF CGS are adopted on EVM while using NexFET CSD17313 as Q1.

GUID-D3A48A4F-2DB2-45DF-954C-DFC80DA88245-low.gifFigure 10-3 Input ACFET and RBFET