JAJSOY8H November   2011  – July 2022 BQ24160 , BQ24160A , BQ24161 , BQ24161B , BQ24163 , BQ24168

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Charge Mode Operation
        1. 8.3.1.1 Charge Profile
        2. 8.3.1.2 PWM Controller in Charge Mode
      2. 8.3.2  Battery Charging Process
      3. 8.3.3  Battery Detection
      4. 8.3.4  Dynamic Power Path Management (DPPM)
      5. 8.3.5  Input Source Connected
      6. 8.3.6  Battery Only Connected
      7. 8.3.7  Battery Discharge FET (BGATE)
      8. 8.3.8  DEFAULT Mode
      9. 8.3.9  Safety Timer and Watchdog Timer (BQ24160/BQ24161/BQ24161B/BQ24163 only)
      10. 8.3.10 D+, D– Based Adapter Detection for the USB Input (D+, D–, BQ24160/0A/3)
      11. 8.3.11 USB Input Current Limit Selector Input (PSEL, BQ24161/161B/168 only)
      12. 8.3.12 Hardware Chip Disable Input (CD)
      13. 8.3.13 LDO Output (DRV)
      14. 8.3.14 External NTC Monitoring (TS)
      15. 8.3.15 Thermal Regulation and Protection
      16. 8.3.16 Input Voltage Protection in Charge Mode
        1. 8.3.16.1 Sleep Mode
        2. 8.3.16.2 Input Voltage Based DPM
        3. 8.3.16.3 Bad Source Detection
        4. 8.3.16.4 Input Overvoltage Protection
        5. 8.3.16.5 Reverse Boost (Boost Back) Prevention Circuit
      17. 8.3.17 Charge Status Outputs (STAT, INT)
      18. 8.3.18 Good Battery Monitor
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
      1. 8.5.1 Serial Interface Description
        1. 8.5.1.1 F/S Mode Protocol
    6. 8.6 Register Maps
      1. 8.6.1 Status/Control Register (READ/WRITE)
      2. 8.6.2 Battery/ Supply Status Register (READ/WRITE)
      3. 8.6.3 Control Register (READ/WRITE)
      4. 8.6.4 Control/Battery Voltage Register (READ/WRITE)
      5. 8.6.5 Vender/Part/Revision Register (READ only)
      6. 8.6.6 Battery Termination/Fast Charge Current Register (READ/WRITE)
      7. 8.6.7 VIN-DPM Voltage/ DPPM Status Register
      8. 8.6.8 Safety Timer/ NTC Monitor Register (READ/WRITE)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Inductor and Capacitor Selection Guidelines
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Requirements for SYS Output
    2. 10.2 Requirements for Charging
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
      1.      Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.5 Electrical Characteristics

Circuit of Figure 9-1, VSUPPLY = VUSB or VIN (whichever is supplying the IC), VUVLO < VSUPPLY < VOVP and VSUPPLY > VBAT+VSLP, TJ = -40°C – 125°C and TJ = 25°C for typical values (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT CURRENTS
ISUPPLYSupply current for control (VIN or VUSB)VUVLO < VSUPPLY < VOVP and
VSUPPLY > VBAT+VSLP		PWM switching15mA
PWM NOT switching5
0°C < TJ < 85°C, High-Z Mode175μA
IBATLEAKLeakage current from BAT to the Supply0°C < TJ < 85°C, VBAT = 4.2V, VUSB = VIN = 0V5μA
IBAT_HIZBattery discharge current in High Impedance mode, (BAT, SW, SYS)0°C< TJ < 85°C, VBAT = 4.2V, VSUPPLY = 5V or 0V,
SCL, SDA = 0 V or 1.8V, High-Z Mode		55μA
POWER-PATH MANAGEMENT
VSYS(REG)System regulation voltageCharge Enabled, VBAT < VMINSYSBQ24160, 1, 1B, 83.603.73.82V
BQ241633.33.43.5
Battery FET turned off (Charge Disabled, TS Fault or Charging Terminated)VBATREG
+ 1.5%		VBATREG
+ 3.0%		VBATREG
+ 4.17%
VMINSYSMinimum system regulation voltageCharge enabled, VBAT < VMINSYS, Input current limit or VINDPM activeBQ24160, 1, 1B, 83.43.53.62V
BQ241633.13.23.3V
VBSUP1Enter supplement mode thresholdVBAT > 2.5VVBAT
–30mV		V
VBSUP2Exit supplement mode thresholdVBAT > 2.5VVBAT
–10mV		V
ILIM(discharge)Current limit, discharge or supplement modeCurrent monitored in internal FET only.7A
tDGL(SC1)Deglitch time, SYS short circuit during discharge or supplement modeMeasured from (VBAT – VSYS) = 300mV to BAT high-impedance250μs
tREC(SC1)Recovery time, SYS short circuit during discharge or supplement mode60ms
Battery range for BGATE and supplement mode operation2.54.5V
BATTERY CHARGER
RON(BAT-SYS)Internal battery charger MOSFET on-resistanceMeasured from BAT to SYS,
VBAT = 4.2V		YFF pkg3757mΩ
RGE pkg5070
VBATREGCharge VoltageOperating in voltage regulation, Programmable range3.54.44V
Voltage regulation accuracy–1%1%
ICHARGEFast charge current rangeVBATSHRT ≤ VBAT < VBAT(REG) programmable range5502500mA
Fast charge current accuracy0°C to 125°C–10%+10%
VBATSHRTBattery short circuit threshold100mV HysteresisBQ24161, 3, 81.92.02.1V
BQ24160, 1B2.93.03.1
IBATSHRTBattery short circuit currentVBAT < VBATSHRT50mA
tDGL(BATSHRT)Deglitch time for battery short circuit to fastcharge transition32ms
ITERMTermination charge current accuracyITERM = 50mA–40%+40%
ITERM = 100mA –20% +20%
ITERM ≥ 150mA–15%+15%
tDGL(TERM)Deglitch time for charge terminationBoth rising and falling, 2mV overdrive, tRISE, tFALL = 100ns32ms
VRCHRecharge threshold voltageBelow VBATREG120mV
tDGL(RCH)Deglitch timeVBAT falling below VRCH, tFALL=100ns32ms
VDETECTBattery detection thresholdDuring battery detection source cycle3.3V
During battery detection sink cycle3.0
IDETECTBattery detection current before charge done (sink current)Termination enabled (EN_TERM = 1)2.5mA
tDETECTBattery detection timeTermination enabled (EN_TERM = 1)250ms
VIHPSEL, CD Input high logic level1.3V
VILPSEL, CD Input low logic level0.4V
INPUT CURRENT LIMITING
IIN_USBInput current limit threshold (USB input)USB charge mode, VUSB = 5V,
DC Current pulled from SW		IUSBLIM = USB1009095100mA
IUSBLIM = USB500450475500
IUSBLIM = USB150135142.5150
IUSBLIM = USB900800850900
IUSBLIM = USB800700750800
IUSBLIM = 1.5A125014001500
IIN_INInput current limit threshold (IN input)IN charge mode, VIN = 5V,
DC Current pulled from SW		IINLIM = 1.5A1.351.51.65A
IINLIM = 2.5A2.32.52.8
VIN_DPMInput based DPM threshold rangeCharge mode, programmable via I2C, both inputs4.24.76V
VIN_DPM threshold accuracy–2+2%
VDRV BIAS REGULATOR
VDRVInternal bias regulator voltageVSUPPLY > 5.45V55.25.45V
IDRVDRV output current10mA
VDO_DRVDRV Dropout voltage (VSUPPLY – VDRV)ISUPPLY = 1A, VSUPPLY = 5V, IDRV = 10mA450mV
STATUS OUTPUT ( STAT, INT)
VOLLow-level output saturation voltageIO = 10mA, sink current0.4V
IIHHigh-level leakage currentVSTAT = VINT = 5V1µA
PROTECTION
VUVLOIC active threshold voltageVIN rising3.63.84V
VUVLO_HYSIC active hysteresisVIN falling from above VUVLO120150mV
VSLPSleep-mode entry threshold, VSUPPLY-VBAT2.0V ≤VBAT ≤VBATREG, VIN falling040100mV
VSLP_EXITSleep-mode exit hysteresis2.0V ≤VBAT ≤VBATREG40100175mV
Deglitch time for supply rising above VSLP+VSLP_EXITRising voltage, 2mV over drive, tRISE = 100ns30ms
VBAD_SOURCEBad source detection thresholdAfter Bad Source Detection completesVIN_DPM
– 80 mV		V
During Bad Source DetectionVIN_DPM
+ 80 mV		V
tDGL(BSD)Deglitch on bad source detection32ms
VOVPInput supply OVP threshold voltageUSB, VUSB Rising6.36.56.7V
IN, VIN Rising (BQ24160/1/1B/3)10.310.510.7
IN, VIN Rising (BQ24168)6.36.56.7
VOVP(HYS)VOVP hysteresisSupply falling from VOVP100mV
VBOVPBattery OVP threshold voltageVBAT threshold over VOREG to turn off charger during charge1.025 ×
VBATREG		1.05 ×
VBATREG		1.075 ×
VBATREG		V
VBOVP hysteresisLower limit for VBAT falling from above VBOVP1% of
VBATREG
tDGL(BOVP)Battery OVP deglitchBOVP fault shown in register once tDGL(BOVP) expires.
Buck converter shut down immediately when VBAT > VBATOVP		1ms
VBATUVLOBattery undervoltage lockout thresholdVBAT rising, 100mV hysteresis2.5V
ILIMITCycle-by-cycle current limitVSYS shorted4.14.95.6A
TSHTDWNThermal trip165°C
Thermal hysteresis10
TREGThermal regulation thresholdCharge current begins to cut off120°C
Safety timer accuracy(BQ24160/1/1B/3 Only)–20%20%
PWM
Internal top reverse blocking MOSFET on-resistanceIIN_LIMIT = 500mA, Measured from USB to PMIDU95175mΩ
IIN_LIMIT = 500mA, Measured from IN to PMIDI4580
Internal top N-channel Switching MOSFET on-resistanceMeasured from PMIDU to SW100175mΩ
Measured from PMIDI to SW65110
Internal bottom N-channel MOSFET on-resistanceMeasured from SW to PGND65115mΩ
fOSCOscillator frequency1.351.501.65MHz
DMAXMaximum duty cycle95%
DMINMinimum duty cycle0%
BATTERY-PACK NTC MONITOR
VHOTHigh temperature thresholdVTS falling29.73030.5%VDRV
VHYS(HOT)Hysteresis on high thresholdVTS rising1
VWARMHigh temperature thresholdVTS falling37.938.339.6%VDRV
VHYS(WARM)Hysteresis on high thresholdVTS rising1
VCOOLLow temperature thresholdVTS falling5656.556.9%VDRV
VHYS(COOL)Hysteresis on low thresholdVTS rising1
VCOLDLow temperature thresholdVTS falling59.56060.4%VDRV
VHYS(COLD)Hysteresis on low thresholdVTS rising1
TSOFFTS Disable thresholdVTS rising, 2%VDRV hysteresis7073%VDRV
tDGL(TS)Deglitch time on TS change50ms
D+/D– DETECTION (bq24160)
VD+_SRCD+ Voltage Source0.50.60.7V
ID+_SRCD+ Connection Check Current Source714µA
ID-_SINKD- Current Sink50100150µA
ID_LKGLeakage Current into D+/D-D–, switch open–11µA
D+, switch open–11µA
VD+_LOWD+ Low Comparator Threshold0.8V
VD-_LOWdatrefD- Low Comparator Threshold250400mV
RD-_DWND- Pulldown for Connection Check14.2524.8kΩ
BATGD OPERATION
VBATGDGood Battery threshold3.63.83.9V
Deglitch for good battery thresholdVBAT rising to HIGH-Z mode, DEFAULT Mode Only32ms
I2C COMPATIBLE INTERFACE
VIHInput low threshold levelVPULL-UP = 1.8V, SDA and SCL1.3V
VILInput low threshold levelVPULL-UP = 1.8V, SDA and SCL0.4V
VOLOutput low threshold levelIL = 10mA, sink current0.4V
IBIASHigh-Level leakage currentVPULL-UP = 1.8V, SDA and SCL1μA
tWATCHDOGWatchdog timer timeout(BQ24160/1/3 Only)30s