JAJSGP9G October   2011  – August 2023 BQ25504

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 概要 (続き)
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Maximum Power Point Tracking
      2. 8.3.2 Battery Undervoltage Protection
      3. 8.3.3 Battery Overvoltage Protection
      4. 8.3.4 Battery Voltage in Operating Range (VBAT_OK Output)
      5. 8.3.5 Nano-Power Management and Efficiency
    4. 8.4 Device Functional Modes
      1. 8.4.1 Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS))
      2. 8.4.2 Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN, VIN_DC > VIN(DC) and EN = LOW )
      3. 8.4.3 Thermal Shutdown
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Storage Element Selection
      2. 9.1.2 Inductor Selection
      3. 9.1.3 Capacitor Selection
        1. 9.1.3.1 VREF_SAMP Capacitance
        2. 9.1.3.2 VIN_DC Capacitance
        3. 9.1.3.3 VSTOR Capacitance
        4. 9.1.3.4 Additional Capacitance on VSTOR or VBAT
    2. 9.2 Typical Applications
      1. 9.2.1 Solar Application Circuit
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 TEG Application Circuit
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 MPPT Disabled, Low Impedance Source Application Circuit
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 サード・パーティ製品に関する免責事項
      2. 12.1.2 Zip Files
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 サポート・リソース
    5. 12.5 Trademarks
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 用語集
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10 Power Supply Recommendations

The energy harvesting source (e.g., solar panel, TEG, vibration element) must provide a minimum level of power for the IC to operate as designed. The IC's minimum input power required to exit cold start can be estimated as:

Equation 16. GUID-9D314742-CBB5-4428-AD42-5D0DAFA22986-low.gif

where I-STR_ELM_LEAK@1.8V is the storage element leakage current at 1.8V and

RSTOR(CS) is the equivalent resistive load on VSTOR during cold start and 0.05 is an estimate of the worst case efficiency of the cold start circuit.

Once the IC is out of cold start and the system load has been activated (e.g., using the VBAT_OK signal), the energy harvesting element must provide the main boost charger with at least enough power to meet the average system load. Assuming RSTOR(AVG) represents the average resistive load on VSTOR, the simplified equation below gives an estimate of the IC's minimum input power needed during system operation:

Equation 17. GUID-DCF55E97-1E73-425A-A9E0-24EE212ABA48-low.gif

where ηEST can be derived from the datasheet efficiency curves for the given input voltage and current and VBAT_OV. The simplified equation above assumes that, while the harvester is still providing power, the system goes into low power or sleep mode long enough to charge the storage element so that it can power the system when the harvester eventually is down. Refer to spreadsheet SLUC462 for a design example that sizes the energy harvester.