SLUSEC9B October 2020 – July 2024 BQ25618E , BQ25619E
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
QUIESCENT CURRENTS | ||||||
IQ_BAT | Quiescent battery current (BATSNS, BAT, SYS, SW) | VBAT = 4.5V, VBUS floating, SCL, SDA = 0V or 1.8V, TJ < 85 °C, BATFET enabled | 9.5 | 15 | µA | |
ISHIP_BAT | Shipmode battery current (BATSNS, BAT, SYS, SW) | VBAT = 4.5V, VBUS floating, SCL, SDA = 0V or 1.8V, TJ < 85 °C, BATFET disabled | 7 | 9.5 | µA | |
IVBUS | Input current (VBUS) in buck mode when converter is switching | VBUS=5V, charge disabled, converter switching, ISYS = 0A | 2.3 | mA | ||
IHIZ_VBUS | Quiescent input current in HIZ | VAC/VBUS = 5V, HIZ mode, no battery | 37 | 50 | µA | |
VAC/VBUS = 12V, HIZ mode, no battery | 68 | 90 | µA | |||
VBUS / VBAT SUPPLY | ||||||
VVBUS_OP | VBUS operating range | 4 | 13.5 | V | ||
VVBUS_UVLOZ | VBUS rising for active I2C, no battery | VBUS rising | 3.3 | 3.7 | V | |
VVBUS_UVLO | VBUS falling to turnoff I2C, no battery | VBUS falling | 3 | 3.3 | V | |
VVBUS_PRESENT | VBUS to enable REGN | VBUS rising | 3.65 | 3.9 | V | |
VVBUS_PRESENTZ | VBUS to disable REGN | VBUS falling | 3.15 | 3.4 | V | |
VSLEEP | Enter Sleep mode threshold | VBUS falling, VBUS - VBAT, VBAT = 4V | 15 | 60 | 110 | mV |
VSLEEPZ | Exit Sleep mode threshold | VBUS rising, VBUS - VBAT, VBAT = 4V | 115 | 220 | 340 | mV |
VACOV | VAC overvoltage rising threshold to turn off switching | VAC rising, OVP[1:0]=00 | 5.45 | 5.85 | 6.07 | V |
VAC rising, OVP[1:0]=01 | 6.1 | 6.4 | 6.75 | V | ||
VAC rising, OVP[1:0]=10 | 10.45 | 11 | 11.55 | V | ||
VAC rising, OVP[1:0]=11 (default) | 13.5 | 14.2 | 14.85 | V | ||
VAC overvoltage falling threshold to resume switching | VAC falling, OVP[1:0]=00 | 5.2 | 5.6 | 5.8 | V | |
VAC falling, OVP[1:0]=01 | 5.8 | 6.2 | 6.45 | V | ||
VAC falling, OVP[1:0]=10 | 10 | 10.7 | 11.1 | V | ||
VAC falling, OVP[1:0]=11 (default) | 13 | 13.9 | 14.5 | V | ||
VBAT_UVLOZ | BAT voltage for active I2C, no VBUS | VBAT rising | 2.5 | V | ||
VBAT_DPLZ | BAT depletion rising threshold to turn on BATFET | VBAT rising | 2.35 | 2.8 | V | |
VBAT_DPL | BAT depletion falling threshold to turn off BATFET | VBAT falling | 2.18 | 2.62 | V | |
VPOORSRC | Bad adapter detection threshold | VBUS falling | 3.75 | 3.9 | 4.0 | V |
POWER-PATH MANAGEMENT | ||||||
VSYS_MIN | Typical minimum system regulation voltage | VBAT=3.2V < SYS_MIN = 3.5V, ISYS = 0A | 3.5 | 3.65 | V | |
VSYS_OVP | System overvoltage threshold | VREG = 4.35V, Charge disabled, ISYS = 0A | 4.7 | V | ||
RON_RBFET | Blocking FET on-resistance (BQ25618E) | 35 | mΩ | |||
RON_RBFET | Blocking FET on-resistance (BQ25619E) | 45 | mΩ | |||
RON_HSFET | High-side switching FET on-resistance (BQ25618E) | 55 | mΩ | |||
RON_HSFET | High-side switching FET on-resistance (BQ25619E) | 62 | mΩ | |||
RON_LSFET | Low-side switching FET on-resistance (BQ25618E) | 60 | mΩ | |||
RON_LSFET | Low-side switching FET on-resistance (BQ25619E) | 71 | mΩ | |||
VBATFET_FWD | BATFET forward voltage in supplement mode | BAT discharge current 10mA, converter running | 30 | mV | ||
BATTERY CHARGER | ||||||
VREG_RANGE | Typical charge voltage regulation range | 3.5 | 4.52 | V | ||
VREG_STEP | Typical charge voltage step | 4.3V < VREG < 4.52V | 10 | mV | ||
VREG_ACC | Charge voltage accuracy | VREG = 4.2V, TJ = –40°C - 85°C | 4.179 | 4.2 | 4.221 | V |
VREG = 4.35V, TJ = –40°C - 85°C | 4.329 | 4.35 | 4.371 | V | ||
VREG = 4.45V, TJ = –40°C - 85°C | 4.428 | 4.45 | 4.472 | V | ||
ICHG_RANGE | Typical charge current regulation range | 0 | 1.5 | A | ||
ICHG_STEP | Typical charge current regulation step | 20 | mA | |||
ICHG_ACC | Fast charge current regulation accuracy | ICHG = 0.24A, VBAT = 3.1V or 3.8V, TJ = –40°C - 85°C | 0.216 | 0.24 | 0.264 | A |
ICHG = 0.72A, VBAT = 3.1V or 3.8V, TJ = –40°C - 85°C | 0.6768 | 0.72 | 0.7632 | A | ||
ICHG = 1.50A, VBAT = 3.1V or 3.8V, TJ = –40°C - 85°C | 1.41 | 1.5 | 1.59 | A | ||
IPRECHG_RANGE | Typical pre-charge current range | 20 | 260 | mA | ||
IPRECHG_STEP | Typical pre-charge current step | 20 | mA | |||
IPRECHG_ACC | Precharge current accuracy | VBAT = 2.6V, IPRECHG = 40mA | 28 | 40 | 52 | mA |
VBAT = 2.6V, IPRECHG = 120mA | 84 | 120 | 156 | mA | ||
ITERM_RANGE | Typical termination current range | 20 | 260 | mA | ||
ITERM_STEP | Typical termination current step | 20 | mA | |||
ITERM_ACC | Termination current accuracy | ITERM=40mA, ICHG>260mA, VREG=4.35V, TJ = 0°C - 85°C | 30 | 40 | 50 | mA |
ITERM=20mA, ICHG<260mA, VREG=4.35V, TJ = 0°C - 85°C | 10 | 20 | 30 | mA | ||
VBAT_SHORTZ | Battery short voltage rising threshold to start pre-charge | VBAT rising | 2.13 | 2.25 | 2.35 | V |
VBAT_SHORT | Battery short voltage falling threshold to stop pre-charge | VBAT falling | 1.85 | 2 | 2.15 | V |
IBAT_SHORT | Battery short trickle charging current | VBAT < VBAT_SHORTZ | 15 | 25 | 30 | mA |
VBATLOWV | Battery LOWV rising threshold to start fast-charge | VBAT rising | 3 | 3.12 | 3.24 | V |
Battery LOWV falling threshold to stop fast-charge | VBAT falling | 2.7 | 2.8 | 2.9 | V | |
VRECHG | Battery recharge threshold | VRECHG=0, VBAT falling (default) | 90 | 120 | 150 | mV |
VRECHG=1, VBAT falling | 185 | 210 | 245 | mV | ||
ISYS_LOAD | System discharge load current during SYSOVP | 30 | mA | |||
RON_BATFET | Battery FET on-resistance | TJ = -40°C - 85°C | 19.5 | 26 | mΩ | |
TJ = -40°C - 125°C | 19.5 | 30 | mΩ | |||
BATTERY OVER-VOLTAGE PROTECTION | ||||||
VBAT_OVP | Battery overvoltage rising threshold | VBAT rising, as percentage of VREG | 103 | 104 | 105 | % |
Battery overvoltage falling threshold | VBAT falling, as percentage of VREG | 101 | 102 | 103 | % | |
INPUT VOLTAGE / CURRENT REGULATION | ||||||
VINDPM_RANGE | Typical input voltage regulation range | 3.9 | 5.4 | V | ||
VINDPM_STEP | Typical input voltage regulation step | 100 | mV | |||
VINDPM_ACC | Typical input voltage regulation accuracy | 4.365 | 4.5 | 4.635 | V | |
VINDPM_TRACK | VINDPM threshold to track battery voltage | VBAT = 4.35V, VINDPM_BAT_TRACK = VBAT+200mV | 4.45 | 4.55 | 4.74 | V |
IINDPM_RANGE | Typical input current regulation range | 0.1 | 3.2 | A | ||
IINDPM_STEP | Typical input current regulation step | 100 | mA | |||
IINDPM_ACC | Input current regulation accuracy | IINDPM = 500mA (TJ=-40°C - 85°C) | 450 | 465 | 500 | mA |
IINDPM_ACC | Input current regulation accuracy | IINDPM = 900mA (TJ=-40°C-85°C) | 750 | 835 | 900 | mA |
IINDPM_ACC | Input current regulation accuracy | IINDPM = 1500mA (TJ=-40°C-85°C) | 1300 | 1390 | 1500 | mA |
THERMAL REGULATION AND THERMAL SHUTDOWN | ||||||
TREG | Junction temperature regulation accuracy | TREG = 90°C | 90 | °C | ||
TREG = 110°C | 110 | °C | ||||
TSHUT | Thermal Shutdown Rising threshold | Temperature Increasing | 150 | °C | ||
Thermal Shutdown Falling threshold | Temperature Decreasing | 130 | °C | |||
CHARGE MODE THERMISTOR COMPARATOR | ||||||
VT1_RISE% | TS pin voltage rising threshold, Charge suspended above this voltage. | As Percentage to REGN (0°C w/ 103AT) | 72.4 | 73.3 | 74.2 | % |
VT1_FALL% | TS
pin voltage falling threshold. Charge re-enabled to 20% of ICHG and
VREG below this voltage. |
As Percentage to REGN | 71.5 | 72 | 72.5 | % |
VT2_RISE% | TS pin voltage rising threshold, Charge back to 20% of ICHG and VREG above this voltage. | As Percentage to REGN, JEITA_T2=5°C w/ 103AT | 70.25 | 70.75 | 71.25 | % |
As Percentage to REGN, JEITA_T2=10°C w/ 103AT | 67.75 | 68.25 | 68.75 | % | ||
As Percentage to REGN, JEITA_T2=15°C w/ 103AT | 64.75 | 65.25 | 65.75 | % | ||
As Percentage to REGN, JEITA_T2=20°C w/ 103AT | 61.75 | 62.25 | 62.75 | % | ||
VT2_FALL% | TS pin voltage falling threshold. Charge back to ICHG and VREG below this voltage. | As Percentage to REGN, JEITA_T2=5°C w/ 103AT | 68.7 | 69.2 | 69.7 | % |
As Percentage to REGN, JEITA_T2=10°C w/ 103AT | 66.45 | 66.95 | 67.45 | % | ||
As Percentage to REGN, JEITA_T2=15°C w/ 103AT | 63.7 | 64.2 | 64.7 | % | ||
As Percentage to REGN, JEITA_T2=20°C w/ 103AT | 60.7 | 61.2 | 61.7 | % | ||
VT3_FALL% | TS pin voltage falling threshold. Charge to ICHG and 4.1V below this voltage. | As Percentage to REGN, JEITA_T3=40°C w/ 103AT | 47.75 | 48.25 | 48.75 | % |
As Percentage to REGN, JEITA_T3=45°C w/ 103AT | 44.25 | 44.75 | 45.25 | % | ||
As Percentage to REGN, JEITA_T3=50°C w/ 103AT | 40.2 | 40.7 | 41.2 | % | ||
As Percentage to REGN, JEITA_T3=55°C w/ 103AT | 37.2 | 37.7 | 38.2 | % | ||
VT3_RISE% | TS pin voltage rising threshold. Charge back to ICHG and VREG above this voltage. | As Percentage to REGN, JEITA_T3=40°C w/ 103AT | 48.8 | 49.3 | 49.8 | % |
As Percentage to REGN, JEITA_T3=45°C w/ 103AT | 45.3 | 45.8 | 46.3 | % | ||
As Percentage to REGN, JEITA_T3=50°C w/ 103AT | 41.3 | 41.8 | 42.3 | % | ||
As Percentage to REGN, JEITA_T3=55°C w/ 103AT | 38.5 | 39 | 39.5 | % | ||
VT5_FALL% | TS pin voltage falling threshold, charge suspended below this voltage. | As Percentage to REGN (60°C w/ 103AT) | 33.7 | 34.2 | 35.1 | % |
VT5_RISE% | TS pin voltage rising threshold. Charge back to ICHG and 4.1V above this voltage. | As Percentage to REGN | 35 | 35.5 | 36 | % |
SWITCHING CONVERTER | ||||||
FSW | PWM switching frequency | Oscillator frequency | 1.32 | 1.5 | 1.68 | MHz |
DMAX | Maximum PWM Duty Cycle | 97 | % | |||
REGN LDO | ||||||
VREGN | REGN LDO output voltage | VVBUS = 5V, IREGN = 20mA | 4.58 | 4.7 | 4.8 | V |
VVBUS = 9V, IREGN = 20mA | 5.6 | 6 | 6.5 | V | ||
IREGN | REGN LDO current limit | VVBUS = 5V, VREGN = 3.8V | 50 | mA | ||
I2C INTERFACE (SCL, SDA) | ||||||
VIH | Input high threshold level, SDA and SCL | Pull up rail 1.8V | 1.3 | V | ||
VIL | Input low threshold level | Pull up rail 1.8V | 0.4 | V | ||
VOL | Output low threshold level | Sink current = 5mA | 0.4 | V | ||
IBIAS | High-level leakage current | Pull up rail 1.8V | 1 | µA | ||
VIH_SDA | Input high threshold level, SDA | Pull up rail 1.8V | 1.3 | V | ||
VIL_SDA | Input low threshold level | Pull up rail 1.8V | 0.4 | V | ||
VOL_SDA | Output low threshold level | Sink current = 5mA | 0.4 | V | ||
IBIAS_SDA | High-level leakage current | Pull up rail 1.8V | 1 | µA | ||
VIH_SCL | Input high threshold level, SDA | Pull up rail 1.8V | 1.3 | V | ||
VIL_SCL | Input low threshold level | Pull up rail 1.8V | 0.4 | V | ||
VOL_SCL | Output low threshold level | Sink current = 5mA | 0.4 | V | ||
IBIAS_SCL | High-level leakage current | Pull up rail 1.8V | 1 | µA | ||
LOGIC INPUT PIN | ||||||
VIH | Input high threshold level (/CE, PSEL) | 1.3 | V | |||
VIL | Input low threshold level (/CE, PSEL) | 0.4 | V | |||
IIN_BIAS | High-level leakage current (/CE, PSEL) | Pull up rail 1.8V | 1 | µA | ||
LOGIC OUTPUT PIN | ||||||
VOL | Output low threshold level (/INT, STAT, /PG) | Sink current = 5mA | 0.4 | V | ||
IOUT_BIAS | High-level leakage current (/INT, STAT, /PG) | Pull up rail 1.8V | 1 | µA |