JAJSSD2A October 2023 – December 2023 BQ25638
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VVBUS | Input voltage | 3.9 | 18 | V | |
VBAT | Battery voltage | 4.8 | V | ||
IVBUS | Input current | 3.2 | A | ||
ISW | Output current (SW) | 5.0 | A | ||
IBAT | Fast charging current | 5.0 | A | ||
RMS discharge current (continuously) | 7 | A | |||
Peak discharge current (up to 50ms) | 9 | A | |||
IREGN | Maximum REGN Current, VVBUS ≤ 18 V | 20 | mA | ||
IREGN | Maximum REGN Current, 18 V ≤ VVBUS ≤ 28 V | 8.5 | mA | ||
TA | Ambient temperature | –40 | 85 | °C | |
TJ | Junction temperature | –40 | 125 | °C | |
LSW | Inductor for the switching regulator | 0.68 | 2.2 | µH | |
CVBUS | VBUS capacitor (without de-rating) | 1 | µF | ||
CPMID | PMID capacitor (without de-rating) | 10 | µF | ||
CSYS | SYS capacitor (without de-rating) | 20 | µF | ||
CBAT | BAT capacitor (without de-rating) | 10 | µF | ||
CSYS | Effective SYS capacitance with NVM_EN_MIN_CSYS=1 (after voltage de-rating) | 1.5 | µF |