SLUSFN3 July   2024 BQ25820

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics (BQ25820)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Power-On-Reset
      2. 7.3.2 Device Power-Up From Battery Without Input Source
      3. 7.3.3 Device Power Up from Input Source
        1. 7.3.3.1 VAC Operating Window Programming (ACUV and ACOV)
        2. 7.3.3.2 MODE Pin Configuration
        3. 7.3.3.3 REGN Regulator (REGN LDO)
        4. 7.3.3.4 Switching Frequency and Synchronization (FSW_SYNC)
        5. 7.3.3.5 Device HIZ Mode
      4. 7.3.4 Battery Charging Management
        1. 7.3.4.1 Autonomous Charging Cycle
          1. 7.3.4.1.1 Charge Current Programming (ICHG pin and ICHG_REG)
        2. 7.3.4.2 Li-Ion Battery Charging Profile
        3. 7.3.4.3 LiFePO4 Battery Charging Profile
        4. 7.3.4.4 Charging Termination for Li-ion and LiFePO4
        5. 7.3.4.5 Charging Safety Timer
        6. 7.3.4.6 Thermistor Qualification
          1. 7.3.4.6.1 JEITA Guideline Compliance in Charge Mode
          2. 7.3.4.6.2 Cold/Hot Temperature Window in Reverse Mode
      5. 7.3.5 Power Path Management
        1. 7.3.5.1 Dynamic Power Management: Input Voltage and Input Current Regulation
          1. 7.3.5.1.1 Input Current Regulation
            1. 7.3.5.1.1.1 ILIM_HIZ Pin
          2. 7.3.5.1.2 Input Voltage Regulation
            1. 7.3.5.1.2.1 Max Power Point Tracking (MPPT) for Solar PV Panel
      6. 7.3.6 Reverse Mode Power Direction
      7. 7.3.7 Integrated 16-Bit ADC for Monitoring
      8. 7.3.8 Status Outputs (PG, STAT1, STAT2, and INT)
        1. 7.3.8.1 Power Good Indicator (PG)
        2. 7.3.8.2 Charging Status Indicator (STAT1, STAT2 Pins)
        3. 7.3.8.3 Interrupt to Host (INT)
      9. 7.3.9 Serial Interface
        1. 7.3.9.1 Data Validity
        2. 7.3.9.2 START and STOP Conditions
        3. 7.3.9.3 Byte Format
        4. 7.3.9.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 7.3.9.5 Target Address and Data Direction Bit
        6. 7.3.9.6 Single Write and Read
        7. 7.3.9.7 Multi-Write and Multi-Read
    4. 7.4 Device Functional Modes
      1. 7.4.1 Host Mode and Default Mode
      2. 7.4.2 Register Bit Reset
    5. 7.5 BQ25820 Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 ACUV / ACOV Input Voltage Operating Window Programming
          2. 8.2.1.2.2 Charge Voltage Selection
          3. 8.2.1.2.3 Switching Frequency Selection
          4. 8.2.1.2.4 Inductor Selection
          5. 8.2.1.2.5 Input (VAC / SYS) Capacitor
          6. 8.2.1.2.6 Output (VBAT) Capacitor
          7. 8.2.1.2.7 Sense Resistor (RAC_SNS and RBAT_SNS) and Current Programming
          8. 8.2.1.2.8 Power MOSFETs Selection
          9. 8.2.1.2.9 ACFETs and BATFETs Selection
        3. 8.2.1.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

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7.3.3.3 REGN Regulator (REGN LDO)

The REGN LDO regulator provides a regulated bias supply for the IC and the TS external resistors. Additionally, REGN voltage can be used to drive the buck switching FETs directly by tying the DRV_SUP pin to REGN. The pull-up rail of PG, STAT1, and STAT2 can be connected to REGN as well. The REGN LDO is enabled when below conditions are valid:

  1. VAC voltage above VVAC_OK and charge is enabled in forward mode.
  2. BAT voltage above 3 V in Reverse mode and Reverse Mode is enabled (EN_REV = 1)

At high input voltages and/or large gate drive requirements, the power loss from gate driving via the REGN LDO can be excessive. This power for the gate drivers can be provided externally by directly driving the DRV_SUP pin with a high efficiency supply ranging from 4.5 V to 12 V. This supply should be able to provide at least 50 mA or more as required to drive the switching FET gate charge.

The power dissipation for driving the gates via the REGN LDO is: P R E G N = ( V A C - V R E G N ) × Q G T O T 1,2 × f S W , where QG(TOT)1,2 is the sum of the total gate charge for all switching FETs and fSW is the programmed switching frequency. The Safe Operating Area (SOA) below is based on a 1-W power loss limit.

BQ25820 REGN LDO Safe Operating Area (SOA) Figure 7-2 REGN LDO Safe Operating Area (SOA)