JAJSEG2K October   2017  – July 2024 BQ2980 , BQ2982

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1 Device Configurability
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Overvoltage (OV) Status
      2. 7.3.2 Undervoltage (UV) Status
      3. 7.3.3 Overcurrent in Charge (OCC) Status
      4. 7.3.4 Overcurrent in Discharge (OCD) and Short Circuit in Discharge (SCD) Status
      5. 7.3.5 Overtemperature (OT) Status
      6. 7.3.6 Charge and Discharge Driver
      7. 7.3.7 CTR for FET Override and Device Shutdown
      8. 7.3.8 CTR for PTC Connection
      9. 7.3.9 ZVCHG (0-V Charging)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Modes
        1. 7.4.1.1 Power-On-Reset (POR)
        2. 7.4.1.2 NORMAL Mode
        3. 7.4.1.3 FAULT Mode
        4. 7.4.1.4 SHUTDOWN Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Test Circuits for Device Evaluation
      2. 8.1.2 Test Circuit Diagrams
      3. 8.1.3 Using CTR as FET Driver On/Off Control
    2. 8.2 Typical Applications
      1. 8.2.1 BQ298x Configuration 1: System-Controlled Reset/Shutdown Function
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Selection of Power FET
        4. 8.2.1.4 Application Curves
      2. 8.2.2 BQ298x Configuration 2: CTR Function Disabled
      3. 8.2.3 BQ298x Configuration 3: PTC Thermistor Protection
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 サード・パーティ製品に関する免責事項
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.1 Overview

The BQ298xyz devices are high-side single-cell protectors designed to improve thermal performance by reducing power dissipation across the protection FETs. This is achieved with high-side protection with a built-in charge pump to provide higher Vgs to the FET gate voltage to reduce FET Rdson. Additionally, the device supports as low as a 1-mΩ sense resistor with ±1-mV accuracy, resulting in lower heat dissipation at the sense resistor without compromising current accuracy.

The BQ298x device implements a CTR pin that allows external control to open the power FETs, as well as shut down the device for low power storage. Optionally, the CTR pin can be configured to connect to a PTC and be used for overtemperature protection.