JAJSH51C August   2000  – March 2024 BUF634

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: TO-220 and TO-263 Packages
    6. 6.6 Electrical Characteristics: Wide-Bandwidth Mode for SOIC Package
    7. 6.7 Electrical Characteristics: Low-Quiescent-Current Mode for SOIC Package
    8. 6.8 Typical Characteristics: TO-220 and TO-263 Packages
    9. 6.9 Typical Characteristics: SOIC Package
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Current
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 High Frequency Applications
    2. 8.2 Typical Application
      1. 8.2.1 Boosting Op Amp Output Current
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Power Dissipation
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 TINA-TI™シミュレーション・ソフトウェア (無償ダウンロード)
        2. 9.1.1.2 TI のリファレンス・デザイン
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 ドキュメントの更新通知を受け取る方法
    4. 9.4 サポート・リソース
    5. 9.5 Trademarks
    6. 9.6 静電気放電に関する注意事項
    7. 9.7 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics: TO-220 and TO-263 Packages

at TA = +25°C(1), VS = ±15 V, specifications are for both low quiescent-current mode and wide-bandwidth mode (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
Offset voltage ±30 ±100 mV
Offset voltage vs temperature Specified temperature range ±100 µV/°C
Offset voltage vs power supply VS = ±2.25 V(2) to ±18 V 0.1 1 mV/V
Input bias current VIN = 0 V Low quiescent current mode ±0.5 ±2 µA
Wide bandwidth mode ±5 ±20
Input impedance RL = 100 Ω Low quiescent current mode 80 || 8 MΩ || pF
Wide bandwidth mode 8 || 8
Noise voltage f = 10 kHz 4 nV/√Hz
GAIN
Gain RL = 1 kΩ, VO = ±10 V 0.95 0.99 V/V
RL = 100 Ω, VO = ±10 V 0.85 0.93
RL = 67 Ω, VO = ±10 V 0.8 0.9
OUTPUT
Current output, continuous ±250 mA
Voltage output Positive IO = 10 mA (V+) – 2.1 (V+) – 1.7 V
Negative IO = –10 mA (V–) + 2.1 (V–) + 1.8
Positive IO = 100 mA (V+) – 3 (V+) – 2.4
Negative IO = –100 mA (V–) + 4 (V–) + 3.5
Positive IO = 150 mA (V+) – 4 (V+) – 2.8
Negative IO = –150 mA (V–) + 5 (V–) +4
Short-circuit current Low quiescent current mode ±350 ±550 mA
Wide bandwidth mode ±400 ±550
DYNAMIC RESPONSE
Bandwidth, –3dB RL = 1 kΩ Low quiescent current mode 30 MHz
Wide bandwidth mode 180
RL = 100 Ω Low quiescent current mode 20
Low quiescent current mode 160
Slew rate 20 Vp-p, RL = 100 Ω 2000 V/µs
Settling time 0.1% 20-V step, RL = 100 Ω 200 ns
1% 50
Differential gain 3.58 MHz, VO = 0.7 V, RL = 150 Ω Low quiescent current mode 4%
Wide bandwidth mode 0.4%
Differential phase 3.58 MHz, VO = 0.7 V, RL = 150 Ω Low quiescent current mode 2.5 °
Wide bandwidth mode 0.1
POWER SUPPLY
Specified operating voltage ±15 V
Operating voltage ±2.25(2) ±18 V
IQ Quiescent current IO = 0 mA Low quiescent current mode ±1.5 ±2 mA
Wide bandwidth mode ±15 ±20
TEMPERATURE
TJ Thermal shutdown temperature 175 °C
(1) Tests are performed on high-speed automatic test equipment, at approximately 25°C junction temperature. The power dissipation of this product causes some parameters to shift when warmed up. See Section 6.8 for overtemperature performance.
(2) Limited output swing available at low supply voltage. See output voltage specifications.