3 Description
This –20 V, 5.5 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
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Product Summary
TA = 25°C |
TYPICAL VALUE |
UNIT |
VDS |
Drain-to-source voltage |
–20 |
V |
Qg |
Gate charge total (–4.5 V) |
10.9 |
nC |
Qgd |
Gate charge gate to drain |
2.2 |
nC |
RDS(on) |
Drain-to-source on resistance |
VGS = –1.8 V |
40 |
mΩ |
VGS = –2.5 V |
10.1 |
mΩ |
VGS = –4.5 V |
5.5 |
mΩ |
Vth |
Threshold voltage |
–0.9 |
V |
Ordering Information(1)
DEVICE |
QTY |
MEDIA |
PACKAGE |
SHIP |
CSD25404Q3 |
2500 |
13-Inch Reel |
SON 3.3 mm × 3.3 mm Plastic Package |
Tape and Reel |
CSD25404Q3T |
250 |
7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C |
VALUE |
UNIT |
VDS |
Drain-to-source voltage |
–20 |
V |
VGS |
Gate-to-source voltage |
±12 |
V |
ID |
Continuous drain current, TC = 25°C |
–104 |
A |
Continuous drain current (package limit) |
–60 |
Continuous drain current(1) |
–18 |
IDM |
Pulsed drain current(2) |
–240 |
A |
PD |
Power dissipation(1) |
2.8 |
W |
Power dissipation, TC = 25°C |
96 |
TJ, Tstg |
Operating junction, storage temperature |
–55 to 150 |
°C |
- RθJA = 45°C/W on 1 inch2 Cu (2 oz.) on 0.060 inch thick FR4 PCB.
- Max RθJC = 1.3, pulse duration ≤100 µs, duty cycle ≤1%.