SLPS570 November 2015 CSD25404Q3
PRODUCTION DATA.
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This –20 V, 5.5 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-source voltage | –20 | V | |
Qg | Gate charge total (–4.5 V) | 10.9 | nC | |
Qgd | Gate charge gate to drain | 2.2 | nC | |
RDS(on) | Drain-to-source on resistance | VGS = –1.8 V | 40 | mΩ |
VGS = –2.5 V | 10.1 | mΩ | ||
VGS = –4.5 V | 5.5 | mΩ | ||
Vth | Threshold voltage | –0.9 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD25404Q3 | 2500 | 13-Inch Reel | SON 3.3 mm × 3.3 mm Plastic Package | Tape and Reel |
CSD25404Q3T | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-source voltage | –20 | V |
VGS | Gate-to-source voltage | ±12 | V |
ID | Continuous drain current, TC = 25°C | –104 | A |
Continuous drain current (package limit) | –60 | ||
Continuous drain current(1) | –18 | ||
IDM | Pulsed drain current(2) | –240 | A |
PD | Power dissipation(1) | 2.8 | W |
Power dissipation, TC = 25°C | 96 | ||
TJ, Tstg |
Operating junction, storage temperature |
–55 to 150 | °C |
RDS(on) vs VGS |
Gate Charge |