SLPS418A June   2013  – June 2014 CSD75207W15

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD75207W15 Package Dimensions
    2. 7.2 Recommended PCB Land Pattern
    3. 7.3 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • YZF|9
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Dual P-Channel MOSFETs
  • Common Source Configuration
  • Small Footprint 1.5-mm × 1.5-mm
  • Gate-Source Voltage Clamp
  • Gate ESD Protection >4 kV
    • HBM JEDEC standard JESD22-A114
  • Pb and Halogen Free
  • RoHS Compliant

2 Applications

  • Battery Management
  • Battery Protection
  • Load and Input Switching

3 Description

The CSD75207W15 device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications. The device has also been awarded with U.S. patents 7952145, 7420247, 7235845, and 6600182.

ISO_CHIP_LPS213.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VD1D2 Drain-to-Drain Voltage –20 V
Qg Gate Charge Total (–4.5 V) 2.9 nC
Qgd Gate Charge Gate to Drain 0.4 nC
RD1D2(on) Drain-to-Drain On Resistance VGS = –1.8 V 119 mΩ
VGS = –2.5 V 64 mΩ
VGS = –4.5 V 45 mΩ
VGS(th) Threshold Voltage –0.8 V

Ordering Information(1)

Device Package Media Qty Ship
CSD75207W15 1.5-mm × 1.5-mm Wafer Level Package 7-Inch Reel 3000 Tape and Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VD1D2 Drain-to-Drain Voltage –20 V
VGS Gate-to-Source Voltage –6.0 V
ID1D2 Continuous Drain to Drain Current(1)(2) –3.9 A
Pulsed Drain to Drain Current,
TC = 25°C(3)		 –24 A
IS Continuous Source Pin Current –1.2 A
Pulsed Source Pin Current(3) –15 A
IG Continuous Gate Clamp Current –0.5 A
Pulsed Gate Clamp Current(3) –7 A
PD Power Dissipation(1) 0.7 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
  1. Per device, both sides in conduction
  2. Device operating at a temperature of 105ºC
  3. Pulse duration 10 μs, duty cycle ≤2%

Top View

P0109-01_LPS213.gif

RD1D2(on) vs VGS

graph07_SLPS429.png