SLPS521A December 2014 – May 2024 CSD85301Q2
PRODUCTION DATA
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PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0V, ID = 250μA | 20 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0V, VDS = 16V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0V, VGS = 10V | 10 | μA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250μA | 0.6 | 0.9 | 1.2 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 1.8V, ID = 0.5A | 65 | 99 | mΩ | ||
VGS = 2.5V, ID = 5A | 33 | 39 | mΩ | ||||
VGS = 3.8V, ID = 5A | 25 | 29 | mΩ | ||||
VGS = 4.5V, ID = 5A | 23 | 27 | mΩ | ||||
gfs | Transconductance | VDS = 2V, ID = 5A | 20 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0V, VDS = 10V, ƒ = 1MHz | 361 | 469 | pF | ||
Coss | Output Capacitance | 68 | 89 | pF | |||
Crss | Reverse Transfer Capacitance | 48 | 62 | pF | |||
RG | Series Gate Resistance | 7.3 | Ω | ||||
Qg | Gate Charge Total (4.5V) | VDS = 10V, ID = 5A | 4.2 | 5.4 | nC | ||
Qgd | Gate Charge Gate-to-Drain | 1.0 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 1.1 | nC | ||||
Qg(th) | Gate Charge at Vth | 0.5 | nC | ||||
Qoss | Output Charge | VDS = 10V, VGS = 0V | 1.3 | nC | |||
td(on) | Turn On Delay Time | VDS =
10V, VGS = 5V, IDS = 5A, RG = 0Ω | 6 | ns | |||
tr | Rise Time | 26 | ns | ||||
td(off) | Turn Off Delay Time | 14 | ns | ||||
tf | Fall Time | 15 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 5A, VGS = 0V | 0.8 | 1.0 | V | ||
Qrr | Reverse Recovery Charge | VDS=
10V, IF = 5A, di/dt = 300A/μs | 7.2 | nC | |||
trr | Reverse Recovery Time | 14 | ns |