JAJSEY5 March   2018 CSD86336Q3D

PRODUCTION DATA.  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
    1.     上面図
      1.      Device Images
  4. 4改訂履歴
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Power Block Performance
    5. 5.5 Electrical Characteristics – Q1 Control FET
    6. 5.6 Electrical Characteristics – Q2 Sync FET
    7. 5.7 Typical Power Block Device Characteristics
    8. 5.8 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Equivalent System Performance
    2. 6.2 Power Loss Curves
    3. 6.3 Safe Operating Area (SOA) Curves
    4. 6.4 Normalized Curves
    5. 6.5 Calculating Power Loss and Safe Operating Area (SOA)
      1. 6.5.1 Design Example
      2. 6.5.2 Calculating Power Loss
      3. 6.5.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Recommended Schematic Overview
    2. 7.2 Recommended PCB Design Overview
      1. 7.2.1 Electrical Performance
      2. 7.2.2 Thermal Performance
  8. 8デバイスおよびドキュメントのサポート
    1. 8.1 ドキュメントの更新通知を受け取る方法
    2. 8.2 コミュニティ・リソース
    3. 8.3 商標
    4. 8.4 静電気放電に関する注意事項
    5. 8.5 Glossary
  9. 9メカニカル、パッケージ、および注文情報
    1. 9.1 Q3Dパッケージの寸法
    2. 9.2 ピン構成
    3. 9.3 推奨ランド・パターン
    4. 9.4 推奨ステンシル

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Equivalent System Performance

Many of today’s high-performance computing systems require low-power consumption in an effort to reduce system operating temperatures and improve overall system efficiency. This has created a major emphasis on improving the conversion efficiency of today’s synchronous buck topology. In particular, there has been an emphasis in improving the performance of the critical power semiconductor in the power stage of this application (see Figure 26). As such, optimization of the power semiconductors in these applications, needs to go beyond simply reducing RDS(ON).

CSD86336Q3D Equivalent_System_Top.gifFigure 26. Synchronous Buck Topology

The CSD86336Q3D is part of TI’s power block product family which is a highly optimized product for use in a synchronous buck topology requiring high current, high efficiency, and high frequency. It incorporates TI’s latest generation silicon which has been optimized for switching performance, as well as minimizing losses associated with QGD, QGS, and QRR. Furthermore, TI’s patented packaging technology has minimized losses by nearly eliminating parasitic elements between the control FET and sync FET connections (see Figure 27). A key challenge solved by TI’s patented packaging technology is the system level impact of Common Source Inductance (CSI). CSI greatly impedes the switching characteristics of any MOSFET which in turn increases switching losses and reduces system efficiency. As a result, the effects of CSI need to be considered during the MOSFET selection process. In addition, standard MOSFET switching loss equations used to predict system efficiency need to be modified in order to account for the effects of CSI. Further details behind the effects of CSI and modification of switching loss equations are outlined in Power Loss Calculation With Common Source Inductance Consideration for Synchronous Buck Converters (SLPA009).

CSD86336Q3D Equivalent_System_Bottom.gifFigure 27. Elimination of Common Source Inductance

The combination of TI’s latest generation silicon and optimized packaging technology has created a benchmarking solution that outperforms industry standard MOSFET chipsets of similar RDS(ON) and MOSFET chipsets with lower RDS(ON). Figure 28 and Figure 29 compare the efficiency and power loss performance of the CSD86336Q3D versus industry standard MOSFET chipsets commonly used in this type of application. This comparison purely focuses on the efficiency and generated loss of the power semiconductors only. The performance of CSD86336Q3D clearly highlights the importance of considering the effective AC on-impedance (ZDS(ON)) during the MOSFET selection process of any new design. Simply normalizing to traditional MOSFET RDS(ON) specifications is not an indicator of the actual in-circuit performance when using TI’s power block technology.

CSD86336Q3D D030_SLPS666.gif
Figure 28. Efficiency
CSD86336Q3D D031_SLPS666.gif
Figure 29. Power Loss

Table 1 compares the traditional DC measured RDS(ON) of CSD86336Q3D versus its ZDS(ON). This comparison takes into account the improved efficiency associated with TI’s patented packaging technology. As such, when comparing TI’s power block products to individually packaged discrete MOSFETs or dual MOSFETs in a standard package, the in-circuit switching performance of the solution must be considered. In this example, individually packaged discrete MOSFETs or dual MOSFETs in a standard package would need to have DC measured RDS(ON) values that are equivalent to the ZDS(ON) value of CSD86336Q3D in order to have the same efficiency performance at full load. Mid to light-load efficiency will still be lower with individually packaged discrete MOSFETs or dual MOSFETs in a standard package.

Table 1. Comparison of RDS(ON) vs ZDS(ON)

PARAMETER HS LS
TYP MAX TYP MAX
Effective AC on-impedance ZDS(ON) (VGS = 5 V) 9.1 3.4
DC measured RDS(ON) (VGS = 4.5 V) 9.1 11.4 4.6 5.7

The CSD86336Q3D NexFET™ power block is an optimized design for synchronous buck applications using 5-V gate drive. The control FET and sync FET silicon are parametrically tuned to yield the lowest power loss and highest system efficiency. As a result, a new rating method is needed which is tailored towards a more systems-centric environment. System-level performance curves such as power loss, safe operating area (SOA), and normalized graphs allow engineers to predict the product performance in the actual application.