JAJSDT0 September 2017 CSD87503Q3E
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage(1) | VGS = 0 V, ID = 250 μA | 30 | V | |||
IDSS | Drain-to-source leakage current(1) | VGS = 0 V, VDS = 24 V | 1 | μA | |||
IGSS | Gate-to-source leakage current(1) | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage(1) | VDS = VGS, ID = 250 μA | 1.3 | 1.7 | 2.1 | V | |
RDD(on) | Drain-to-drain on-resistance | VGS = 4.5 V, ID1D2 = 6 A | 17.3 | 21.9 | mΩ | ||
VGS = 10 V, ID1D2 = 6 A | 13.5 | 16.9 | |||||
gfs | Transconductance | VDS = 3 V, ID1D2 = 6 A | 24 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
CISS | Input capacitance | VGS = 0 V, VD1D2 = 15 V, ƒ = 1 MHz | 782 | 1020 | pF | ||
COSS | Output capacitance | 157 | 204 | pF | |||
CRSS | Reverse transfer capacitance | 149 | 194 | pF | |||
Rg | Series gate resistance(1) | 1.5 | 3.0 | Ω | |||
Qg | Gate charge total (4.5 V) | VD1D2 = 15 V, ID1D2 = 6 A | 13.4 | 17.4 | nC | ||
Gate charge total (10 V) | 32.9 | 42.8 | |||||
Qgd | Gate charge gate-to-drain | 5.8 | nC | ||||
Qgs | Gate charge gate-to-source | 4.8 | nC | ||||
Qg(th) | Gate charge at Vth | 1.0 | nC | ||||
QOSS | Output charge | VD1D2 = 15 V, VGS = 0 V | 4.3 | nC | |||
td(on) | Turnon delay time | VD1D2 = 15 V, VGS = 10 V, ID1D2 = 6 A, RG = 0 Ω |
10 | ns | |||
tr | Rise time | 40 | ns | ||||
td(off) | Turnoff delay time | 25 | ns | ||||
tf | Fall time | 8 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage(1) | ID = 0.5 A, VGS = 0 V | 0.75 | 0.95 | V | ||
Qrr | Reverse recovery charge(1) | VDS = 15 V, IF = 6 A, di/dt = 300 A/μs | 9.2 | nC | |||
trr | Reverse recovery time(1) | 14 | ns |