6.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted)(1)
|
MIN |
MAX |
UNIT |
|
VIN to PGND |
–0.3 |
25 |
V |
|
VIN to VSW |
–0.3 |
25 |
V |
|
VIN to VSW (10 ns) |
–7 |
27 |
V |
|
VSW to PGND |
–0.3 |
20 |
V |
|
VSW to PGND (10 ns) |
–7 |
23 |
V |
|
VDD to PGND |
–0.3 |
7 |
V |
|
ENABLE, PWM, FCCM. TAO, IOUT, REFIN to PGND |
–0.3 |
VDD + 0.3 V |
V |
|
BOOT to BOOT_R(2) |
–0.3 |
VDD + 0.3 V |
V |
PD |
Power dissipation |
|
12 |
W |
TJ |
Operating junction |
–55 |
150 |
°C |
Tstg |
Storage temperature |
–55 |
150 |
°C |
(1) Stresses beyond those listed under
Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Should not exceed 7 V
6.3 Recommended Operating Conditions
TA = 25° (unless otherwise noted)
|
MIN |
MAX |
UNIT |
VDD |
Gate drive voltage |
4.5 |
5.5 |
V |
VIN |
Input supply voltage(1) |
|
16 |
V |
VOUT |
Output voltage |
|
5.5 |
V |
IOUT |
Continuous output current |
VIN = 12 V, VDD = 5V, VOUT = 3.3 V, ƒSW = 500 kHz, LOUT = 0.47 µH(2) |
|
60 |
A |
IOUT-PK |
Peak output current(3) |
|
90 |
A |
ƒSW |
Switching frequency |
CBST = 0.1 µF (min) |
|
1250 |
kHz |
|
On time duty cycle |
ƒSW = 1 MHz |
|
85% |
|
|
Minimum PWM on time |
40 |
|
ns |
|
Operating temperature |
–40 |
125 |
°C |
(1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
(2) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
(3) System conditions as defined in Note 1. Peak Output Current is applied for tp = 50 µs
6.4 Thermal Information
TA = 25°C (unless otherwise noted)
THERMAL METRIC |
MIN |
TYP |
MAX |
UNIT |
RθJC(top) |
Junction-to-case (top of package) thermal resistance (1) |
|
|
5 |
°C/W |
RθJB |
Junction-to-board thermal resistance(2) |
|
|
1.5 |
°C/W |
(1) RθJC(top) is determined with the device mounted on a 1 inch² (6.45 cm²), 2-oz (0.071 mm thick) Cu pad on a 1.5 inches x 1.5 inches, 0.06-inch (1.52 mm) thick FR4 board.
(2) RθJB value based on hottest board temperature within 1 mm of the package.