SLPS422B March   2013  – August 2016 CSD97376Q4M

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Application Diagram
      2.      Typical Power Stage Efficiency and Power Loss
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Powering CSD97376Q4M and Gate Drivers
    3. 7.3 Undervoltage Lockout Protection (UVLO)
    4. 7.4 PWM Pin
    5. 7.5 SKIP# Pin
      1. 7.5.1 Zero Crossing (ZX) Operation
    6. 7.6 Integrated Boost-Switch
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Power Loss Curves
    3. 8.3 Safe Operating Curves (SOA)
    4. 8.4 Normalized Curves
    5. 8.5 Calculating Power Loss and SOA
      1. 8.5.1 Design Example
      2. 8.5.2 Calculating Power Loss
      3. 8.5.3 Calculating SOA Adjustments
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Recommended PCB Design Overview
      2. 9.1.2 Electrical Performance
      3. 9.1.3 Thermal Performance
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Community Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Dimensions
    2. 11.2 Recommended PCB Land Pattern
    3. 11.3 Recommended Stencil Opening

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
  • DPC|8
サーマルパッド・メカニカル・データ
発注情報

8.2 Power Loss Curves

MOSFET centric parameters such as RDS(ON) and Qgd are primarily needed by engineers to estimate the loss generated by the devices. In an effort to simplify the design process for engineers, Texas Instruments has provided measured power loss performance curves. Figure 1 plots the power loss of the CSD97376Q4M as a function of load current. This curve is measured by configuring and running the CSD97376Q4M as it would be in the final application (see Figure 15). The measured power loss is the CSD97376Q4M device power loss which consists of both input conversion loss and gate drive loss. Equation 1 is used to generate the power loss curve.

Equation 1. Power loss = (VIN× IIN) + (VDD × IDD) – (VSW_AVG × IOUT)

The power loss curve in Figure 1 is measured at the maximum recommended junction temperature of
TJ = 125°C under isothermal test conditions.