SLPS422B March   2013  – August 2016 CSD97376Q4M

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Application Diagram
      2.      Typical Power Stage Efficiency and Power Loss
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Powering CSD97376Q4M and Gate Drivers
    3. 7.3 Undervoltage Lockout Protection (UVLO)
    4. 7.4 PWM Pin
    5. 7.5 SKIP# Pin
      1. 7.5.1 Zero Crossing (ZX) Operation
    6. 7.6 Integrated Boost-Switch
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Power Loss Curves
    3. 8.3 Safe Operating Curves (SOA)
    4. 8.4 Normalized Curves
    5. 8.5 Calculating Power Loss and SOA
      1. 8.5.1 Design Example
      2. 8.5.2 Calculating Power Loss
      3. 8.5.3 Calculating SOA Adjustments
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Recommended PCB Design Overview
      2. 9.1.2 Electrical Performance
      3. 9.1.3 Thermal Performance
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Community Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Dimensions
    2. 11.2 Recommended PCB Land Pattern
    3. 11.3 Recommended Stencil Opening

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
  • DPC|8
サーマルパッド・メカニカル・データ
発注情報

7.2 Powering CSD97376Q4M and Gate Drivers

An external VDD voltage is required to supply the integrated gate driver IC and provide the necessary gate drive power for the MOSFETS. A 1-µF 10-V X5R or higher ceramic capacitor is recommended to bypass VDD pin to PGND. A bootstrap circuit to provide gate drive power for the control FET is also included. The bootstrap supply to drive the control FET is generated by connecting a 100-nF 16-V X5R ceramic capacitor between BOOT and BOOT_R pins. An optional RBOOT resistor can be used to slow down the turnon speed of the control FET and reduce voltage spikes on the VSW node. A typical 1-Ω to 4.7-Ω value is a compromise between switching loss and VSW spike amplitude.