Over operating free-air temperature range (unless otherwise noted). The
functional performance of the device specified in this data sheet is achieved
when operating the device within the limits defined by this table. No level of
performance is implied when operating the device above or below these
limits.
|
MIN |
NOM |
MAX |
UNIT |
VOLTAGE SUPPLY |
VCC |
LVCMOS logic supply voltage(1) |
1.65 |
1.8 |
1.95 |
V |
VOFFSET |
Mirror electrode and HVCMOS voltage(1)(2) |
9.5 |
10 |
10.5 |
V |
VBIAS |
Mirror electrode voltage(1) |
17.5 |
18 |
18.5 |
V |
VRESET |
Mirror electrode voltage(1) |
–14.5 |
–14 |
–13.5 |
V |
|VBIAS – VOFFSET| |
Supply voltage difference (absolute value)(3) |
|
|
10.5 |
V |
|VBIAS – VRESET| |
Supply voltage difference (absolute value)(4) |
|
|
33 |
V |
LVCMOS INTERFACE |
VIH(DC) |
DC
input high voltage(5) |
0.7 × VCC |
|
VCC + 0.3 |
V |
VIL(DC) |
DC
input low voltage(5) |
–0.3 |
|
0.3 × VCC |
V |
VIH(AC) |
AC
input high voltage(5) |
0.8 × VCC |
|
VCC + 0.3 |
V |
VIL(AC) |
AC
input low voltage(5) |
–0.3 |
|
0.2 × VCC |
V |
tPWRDNZ |
PWRDNZ pulse duration(6) |
10 |
|
|
ns |
SCP INTERFACE |
ƒSCPCLK |
SCP clock frequency(7) |
|
|
500 |
kHz |
tSCP_PD |
Propagation delay, Clock to Q, from rising–edge of SCPCLK to valid
SCPDO(8) |
0 |
|
900 |
ns |
tSCP_NEG_ENZ |
Time between falling-edge of SCPENZ and the first rising- edge of
SCPCLK |
1 |
|
|
µs |
tSCP_POS_ENZ |
Time between falling-edge of SCPCLK and the rising-edge of
SCPENZ |
1 |
|
|
µs |
tSCP_DS |
SCPDI Clock setup time (before SCPCLK falling edge)(8) |
800 |
|
|
ns |
tSCP_DH |
SCPDI Hold time (after SCPCLK falling edge)(8) |
900 |
|
|
ns |
tSCP_PW_ENZ |
SCPENZ inactive pulse duration (high level) |
2 |
|
|
µs |
LVDS INTERFACE |
ƒCLOCK |
Clock frequency for LVDS interface (all channels), DCLK(9) |
|
|
400 |
MHz |
|VID| |
Input differential voltage (absolute value)(10) |
150 |
300 |
440 |
mV |
VCM |
Common mode voltage(10) |
1100 |
1200 |
1300 |
mV |
VLVDS |
LVDS voltage(10) |
880 |
|
1520 |
mV |
tLVDS_RSTZ |
Time required for LVDS receivers to recover from PWRDNZ |
|
|
2000 |
ns |
ZIN |
Internal differential termination resistance |
80 |
100 |
120 |
Ω |
ZLINE |
Line differential impedance (PWB/trace) |
90 |
100 |
110 |
Ω |
ENVIRONMENTAL |
TARRAY |
Array temperature, Long–term operational(11)(12)(13)(14) |
10 |
|
40 to 70(13) |
°C |
Array temperature, Short–term operational(12)(15) |
0 |
|
10 |
°C |
TWINDOW |
Window temperature – operational(19)(21) |
|
|
85 |
°C |
|TDELTA| |
Absolute temperature difference between any point on the window
edge and the ceramic test point TP1(16)
(17) |
|
|
14 |
°C |
TDP -AVG |
Average dew point temperature (non–condensing)(18) |
|
|
28 |
°C |
TDP-ELR |
Elevated dew point temperature range (non-condensing)(20) |
28 |
|
36 |
°C |
CTELR |
Cumulative time in elevated dew point temperature range |
|
|
24 |
Months |
ILLUMINATION (Lamp) |
L |
Operating system luminance(17) |
|
|
4000 |
lm |
ILLUV |
Illumination Wavelengths < 395 nm(11) |
|
0.68 |
2.00 |
mW/cm2 |
ILLVIS |
Illumination Wavelengths between 395 nm and 800 nm |
Thermally limited |
mW/cm2 |
ILLIR |
Illumination Wavelengths > 800 nm |
|
|
10 |
mW/cm2 |
ILLθ |
Illumination Marginal Ray Angle(21) |
|
|
55 |
deg |
ILLUMINATION (Solid State) |
L |
Operating system luminance(17) |
|
|
6000
|
lm |
ILLUV |
Illumination Wavelengths < 436 nm(11) |
|
|
0.45
|
mW/cm2 |
ILLVIS |
Illumination Wavelengths between 436 nm and 800 nm |
Thermally limited |
mW/cm2 |
ILLIR |
Illumination Wavelengths > 800 nm |
|
|
10
|
mW/cm2 |
ILLθ |
Illumination Marginal Ray Angle(21) |
|
|
55
|
lm
|
(1) All voltages are referenced to common ground VSS. VBIAS, VCC,
VOFFSET, and VRESET power supplies are all required for proper DMD operation.
VSS must also be connected.
(2) VOFFSET supply transients must fall within specified max
voltages.
(3) To prevent excess current, the supply voltage difference |VBIAS
– VOFFSET| must be less than specified limit. See
Section 9,
Figure 9-1, and
Table 9-1.
(4) To prevent excess current, the supply voltage difference |VBIAS
– VRESET| must be less than specified limit. See
Section 9,
Figure 9-1, and
Table 9-1.
(5) Low-speed interface is LPSDR and adheres to the Electrical
Characteristics and AC/DC Operating Conditions table in JEDEC Standard No. 209B,
“Low-Power Double Data Rate (LPDDR)” JESD209B.Tester Conditions for VIH and VIL.
- Frequency = 60 MHz.
Maximum Rise Time = 2.5 ns @ (20%
–
80%)
- Frequency = 60 MHz.
Maximum Fall Time = 2.5 ns @ (80%
–
20%)
(6) PWRDNZ input pin resets the SCP and disables the LVDS
receivers. PWRDNZ input pin overrides SCPENZ input pin and tristates the SCPDO
output pin.
(7) The SCP clock is a gated clock. Duty cycle must be 50% ± 10%.
SCP parameter is related to the frequency of DCLK.
(11) Simultaneous exposure of the DMD to the maximum
Section 6.4 for
temperature and UV illumination reduces device lifetime.
(12) The array temperature cannot be measured directly and must be
computed analytically from the temperature measured at test point 1 (TP1) shown
in
Figure 7-1 and the
package thermal resistance
Section 7.6.
(13) Per
Figure 6-1, the maximum
operational array temperature
must
be derated based on the micromirror landed duty cycle that the DMD experiences
in the end application. See
Section 7.7 for
a definition of micromirror landed duty cycle.
(14) Long-term is defined as the usable life of the device.
(15) Array temperatures beyond those specified as long-term are
recommended for short-term conditions only (power-up). Short-term is defined as
cumulative time over the usable life of the device and is less than 500
hours.
(16) Temperature difference is the highest difference between the
ceramic test point 1 (TP1) and anywhere on the window edge as shown in
Figure 7-1. The window
test points TP2, TP3, TP4 and TP5 shown in
Figure 7-1 are intended
to result in the worst case difference temperature. If a particular application
causes another point on the window edge to result in a larger difference in
temperature,
use
that point.
(17) DMD is qualified at the combination of the maximum temperature
and maximum lumens specified. Operation of the DMD outside of these limits has
not been tested.
(18) The average over time (including storage and operating) that
the device is not in the elevated dew point temperature range.
(19) The locations of Thermal Test Points TP2, TP3, TP4 and TP5 in
Figure 10 are intended to measure the highest window edge temperature. For most
applications, the locations shown are representative of the highest window edge
temperature. If a particular application causes additional points on the window
edge to be at a higher temperature,
add those
test points
(20) Limit
exposure
to dew point temperatures in the elevated range during storage and
operation
to less than a total cumulative time of CTELR.
(21) The maximum marginal ray angle of the incoming illumination
light at any point in the micromirror array, including Pond of Micromirrors
(POM), should not exceed 55 degrees from the normal to the device array plane.
The device window aperture has not necessarily been designed to allow incoming
light at higher maximum angles to pass to the micromirrors, and the device
performance has not been tested nor qualified at angles exceeding this.
Illumination light exceeding this angle outside the micromirror array (including
POM) will contribute to thermal limitations described in this document, and may
negatively affect lifetime.