JAJSQ48A April 2023 – January 2025 DLP550HE
PRODUCTION DATA
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VOLTAGE SUPPLY | |||||
VCC | Supply voltage for LVCMOS core logic(1) | 3.0 | 3.3 | 3.6 | V |
VCCI | Supply voltage for LVDS interface(1) | 3.0 | 3.3 | 3.6 | V |
VOFFSET | Micromirror electrode and HVCMOS voltage(1)(2) | 7.25 | 7.5 | 7.75 | V |
VMBRST | Micromirror clocking pulse voltages(1) | –27 | 26.5 | V | |
|VCCI–VCC| | Supply voltage delta (absolute value)(3) | 0.3 | V | ||
LVCMOS INTERFACE | |||||
VIH | High level input voltage | 1.7 | 2.5 | VCC + 0.3 | V |
VIL | Low level input voltage | –0.3 | 0.7 | V | |
IOH | High level output current at VOH = 2.4 V | –30 | mA | ||
IOL | Low level output current at VOL = 0.4 V | 25 | mA | ||
tPWRDNZ | PWRDNZ pulse width(4) | 10 | ns | ||
SCP INTERFACE | |||||
ƒSCPCLK | SCP clock frequency(5) | 50 | 500 | kHz | |
tSCP_PD | Propagation delay, clock to Q, from rising-edge of SCPCLK to valid SCPDO(6) | 0 | 900 | ns | |
tSCP_DS | SCPDI clock setup time (before SCPCLK falling-edge)(6) | 800 | ns | ||
tSCP_DH | SCPDI hold time (after SCPCLK falling-edge)(6) | 900 | ns | ||
tSCP_NEG_ENZ | Time between falling-edge of SCPENZ and the rising-edge of SCPCLK(5) | 1 | us | ||
SCP_POS_ENZ | Time between falling-edge of SCPCLK and the rising-edge of SCPENZ | 1 | us | ||
tSCP_OUT_EN | Time required for SCP output buffer to recover after SCPENZ (from tristate) | 192/ƒDCLK | s | ||
tSCP_PW_ENZ | SCPENZ inactive pulse width (high level) | 1 | 1/ƒscpclk | ||
tr | Rise time (20% to 80%) | 200 | ns | ||
tf | Fall time (80% to 20%) | 200 | ns | ||
LVDS INTERFACE | |||||
ƒCLOCK | Clock frequency for LVDS interface, DCLK_A and DCLK_B(7) | 200 | 230 | MHz | |
|VID| | Input differential voltage (absolute value)(8) | 100 | 400 | 600 | mV |
VCM | Common mode voltage(8) | 1200 | mV | ||
VLVDS | LVDS voltage(8) | 0 | 1900 | mV | |
tr | Rise Time (20% to 80%) | 100 | 400 | ns | |
tf | Fall time (80% to 20%) | 100 | 400 | ns | |
tLVDS_RSTZ | Time required for LVDS receivers to recover from PWRDNZ | 10 | ns | ||
ZIN | Internal differential termination resistance | 95 | 105 | Ω | |
ENVIRONMENT | |||||
TARRAY | Array temperature, long-term operational(9)(10)(11) | 10 | 40 to 70 | °C | |
Array temperature, short-term operational, 500-hr max(10)(13) | 0 | 10 | °C | ||
TWINDOW | Window temperature, operational(14) | 85 | °C | ||
|TDELTA| | Absolute Temperature delta between any point on the window edge and the ceramic test point TP1(15) | 14 | °C | ||
TDP-AVG | Average dew point temperature (non-condensing)(16) |
28 |
°C | ||
TDP-ELR | Elevated dew point temperature range (non-condensing)(17) | 28 |
36 |
°C | |
CTELR | Cumulative time in elevated dew point temperature range | 24 | months | ||
SOLID STATE ILLUMINATION | |||||
ILLUV | Illumination power at wavelengths < 410 nm(9)(19) | 10 | mW/cm2 | ||
ILLVIS | Illumination power at wavelengths ≥ 410 nm and ≤ 800 nm (18)(19) | 23.7 | W/cm2 | ||
ILLIR | Illumination power at wavelengths > 800 nm(19) | 10 | mW/cm2 | ||
ILLBLU | Illumination power at wavelengths ≥ 410 nm and ≤ 475 nm(18)(19) | 7.5 | W/cm2 | ||
ILLBLU1 | Illumination power at wavelengths ≥ 410 nm and ≤ 440 nm (18)(19) | 1.3 | W/cm2 | ||
LAMP ILLUMINATION | |||||
ILLUV | Illumination power at wavelengths < 395 nm(9)(19) | 2.0 | mW/cm2 | ||
ILLVIS | Illumination power at wavelengths ≥ 395 nm and ≤ 800 nm(18)(19) | 23.7 | W/cm2 | ||
ILLIR | Illumination power at wavelengths > 800 nm(19) | 10 | mW/cm2 |