JAJSFJ1 May   2018 DLPA4000

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      システム・ブロック図
  4. 4 改訂履歴
  5. 5 概要（続き)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Parameters
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Description
    3. 8.3 Feature Description
      1. 8.3.1 Supply and Monitoring
        1. 8.3.1.1 Supply
        2. 8.3.1.2 Monitoring
          1. 8.3.1.2.1 Block Faults
          2. 8.3.1.2.2 Low Battery and UVLO
          3. 8.3.1.2.3 Thermal Protection
      2. 8.3.2 Illumination
        1. 8.3.2.1 Programmable Gain Block
        2. 8.3.2.2 LDO Illumination
        3. 8.3.2.3 Illumination Driver A
        4. 8.3.2.4 External MOSFETs
          1. 8.3.2.4.1 Gate series resistor (RG)
          2. 8.3.2.4.2 Gate series diode (DG)
          3. 8.3.2.4.3 Gate parallel capacitance (CG)
        5. 8.3.2.5 RGB Strobe Decoder
          1. 8.3.2.5.1 Break Before Make (BBM)
          2. 8.3.2.5.2 Openloop Voltage
          3. 8.3.2.5.3 Transient Current Limit
        6. 8.3.2.6 Illumination Monitoring
          1. 8.3.2.6.1 Power Good
          2. 8.3.2.6.2 RatioMetric Overvoltage Protection
      3. 8.3.3 External Power MOSFET Selection
        1. 8.3.3.1 Threshold Voltage
        2. 8.3.3.2 Gate Charge and Gate Timing
        3. 8.3.3.3 On-resistance RDS(on)
      4. 8.3.4 DMD Supplies
        1. 8.3.4.1 LDO DMD
        2. 8.3.4.2 DMD HV Regulator
        3. 8.3.4.3 DMD/DLPC Buck Converters
        4. 8.3.4.4 DMD Monitoring
          1. 8.3.4.4.1 Power Good
          2. 8.3.4.4.2 Overvoltage Fault
      5. 8.3.5 Buck Converters
        1. 8.3.5.1 LDO Bucks
        2. 8.3.5.2 General Purpose Buck Converters
        3. 8.3.5.3 Buck Converter Monitoring
          1. 8.3.5.3.1 Power Good
          2. 8.3.5.3.2 Overvoltage Fault
      6. 8.3.6 Auxiliary LDOs
      7. 8.3.7 Measurement System
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
      1. 8.5.1 SPI
      2. 8.5.2 Interrupt
      3. 8.5.3 Fast-Shutdown in Case of Fault
      4. 8.5.4 Protected Registers
      5. 8.5.5 Writing to EEPROM
    6. 8.6 Register Maps
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Component Selection for General-Purpose Buck Converters
    3. 9.3 System Example With DLPA4000 Internal Block Diagram
  10. 10Power Supply Recommendations
    1. 10.1 Power-Up and Power-Down Timing
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 LED Driver
        1. 11.1.1.1 PowerBlock Gate Control Isolation
        2. 11.1.1.2 VIN to PowerBlocks
        3. 11.1.1.3 Return Current from LEDs and RSense
        4. 11.1.1.4 RC Snubber
        5. 11.1.1.5 Capacitor Choice
      2. 11.1.2 General Purpose Buck 2
      3. 11.1.3 SPI Connections
      4. 11.1.4 RLIM Routing
      5. 11.1.5 LED Connection
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デバイスの項目表記
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報
    1. 13.1 Package Option Addendum
      1. 13.1.1 Packaging Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.3.3.2 Gate Charge and Gate Timing

Power MOSFETs typically specify the total gate charge required to energize and de-energize parameter. The total gate charge informs the gate-to-source rise times and fall times. Make sure the maximum gate-to-source rise times and fall times maximum are approximately between 20 ns and 30 ns. Because the typical high-side driver pull-up resistance is approximately 5 Ω, use a maximum gate capacitance between 4 nF and 6 nF . Design a maximum total gate charge between 20 nC and 30 nC.

Internal non-overlap timing prevents both the high-side and low-side MOSFET of the illumination buck converter from energizing simultaneously. Typical non-overlap timing of approximately 35 ns usually gives sufficient margins. The DLPA4000 device measures the gate-to-source voltage of the external MOSFETs to determine whether a MOSFET energized or not. This measurement is done at the pins of the DLPA4000. For the low-side MOSFET this measurement is done between ILLUM_LSIDE_DRIVE and ILLUM_A_GND. Similarly, for the high-side MOSFET the device measures the gate-to-source voltage between the ILLUM_HSIDE_DRIVE pin and the ILLUM_A_SW pin. Because of the location of these measurement nodes, do not insert any additional drivers or circuitry between the DLPA4000 and the external power MOSFETs of the buck converter. Delays can lead to incorrect on-off detection of the FETs and cause shoot-through currents if the user inserts additional circuitry. Shoot-through currents reduce efficiency, and more seriously damage the power MOSFETs.

LED selection switches require no specific criteria regarding the gate charge or gate timing. Timing of the LED selection signals is in the microsecond range rather than nanosecond range.