JAJSGK8F December 2015 – May 2019 DRA745 , DRA746 , DRA750 , DRA756
PRODUCTION DATA.
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High-speed (HS) bypass capacitors are critcal for proper DDR3 interface operation. It is particularly important to minimize the parasitic series inductance of the HS bypass capacitors, processor/DDR power, and processor/DDR ground connections. Table 8-49 contains the specification for the HS bypass capacitors as well as for the power connections on the PCB. Generally speaking, it is good to:
NO. | PARAMETER | MIN | TYP | MAX | UNIT |
---|---|---|---|---|---|
1 | HS bypass capacitor package size(1) | 0201 | 0402 | 10 Mils | |
2 | Distance, HS bypass capacitor to processor being bypassed(2)(3)(4) | 400 | Mils | ||
3 | processor HS bypass capacitor count per vdds_ddrx rail (12) | See Table 8-3 and (11) | Devices | ||
4 | processor HS bypass capacitor total capacitance per vdds_ddrx rail (12) | See Table 8-3 and (11) | μF | ||
5 | Number of connection vias for each device power/ground ball(5) | Vias | |||
6 | Trace length from device power/ground ball to connection via(2) | 35 | 70 | Mils | |
7 | Distance, HS bypass capacitor to DDR device being bypassed(6) | 150 | Mils | ||
8 | DDR3 device HS bypass capacitor count(7) | 12 | Devices | ||
9 | DDR3 device HS bypass capacitor total capacitance(7) | 0.85 | μF | ||
10 | Number of connection vias for each HS capacitor(8)(9) | 2 | Vias | ||
11 | Trace length from bypass capacitor connect to connection via(2)(9) | 35 | 100 | Mils | |
12 | Number of connection vias for each DDR3 device power/ground ball(10) | 1 | Vias | ||
13 | Trace length from DDR3 device power/ground ball to connection via(2)(8) | 35 | 60 | Mils |