JAJSII9E april 2020 – june 2023 DRA821U , DRA821U-Q1
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
NO.(1) | PARAMETER | DESCRIPTION | MODE | MIN | MAX | UNIT |
---|---|---|---|---|---|---|
O1 | tc(CLK) | Cycle time, CLK | 1.8V | 19 | ns | |
3.3V | 19 | ns | ||||
O2 | tw(CLKL) | Pulse duration, CLK low | -0.3+0.475*P (2) | ns | ||
O3 | tw(CLKH) | Pulse duration, CLK high | -0.3+0.475*P (2) | ns | ||
O4 | td(CLK-CSn) | Delay time, CSn[3:0] active edge to CLK rising edge | 1.8V, OSPI0 DDR TX; 1.8V, OSPI1 DDR TX |
-7-0.475 * P – 0.975 * N * R (3) (4) (5) | 0.525 * P + 1.025 * M * R + 1 (3) (4) (5) | ns |
3.3V, OSPI0 DDR TX; 3.3V, OSPI1 DDR TX |
-7-0.475 * P – 0.975 * N * R (3) (4) (5) | 0.525 * P + 1.025 * M * R + 1 (3) (4) (5) | ns | |||
O5 | td(CLK-CSn) | Delay time, CLK rising edge to CSn inactive edge | 1.8V, OSPI0 DDR TX; 1.8V, OSPI1 DDR TX |
-7+0.475 * P + 0.975 * N * R (3) (4) (5) | 0.525 * P + 1.025 * N * R + 1 (3) (4) (5) | ns |
3.3V, OSPI0 DDR TX; 3.3V, OSPI1 DDR TX |
-7+0.475 * P + 0.975 * N * R (3) (4) (5) | 0.525 * P + 1.025 * N * R + 1 (3) (4) (5) | ns | |||
O6 | td(CLK-D) | Delay time, CLK active edge to D[i:0] transition | 1.8V, OSPI0 DDR TX; 1.8V, OSPI1 DDR TX |
-7.7 | -1.56 | ns |
3.3V, OSPI0 DDR TX; 3.3V, OSPI1 DDR TX |
-7.7 | -1.56 | ns |