SBVS206A November 2012 – March 2015 DRV10866
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage(1) | VCC | –0.3 | 6.0 | V |
CS, FGS, PWM | –0.3 | 6.0 | V | |
GND | –0.3 | 0.3 | V | |
COM | –1.0 | 6.0 | V | |
Output voltage(1) | U, V, W | –1.0 | 7.0 | V |
FG | –0.3 | 6.0 | V | |
Temperature | Operating junction temperature, TJ | –40 | 125 | °C |
Storage temperature, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage | VCC | 1.65 | 5.5 | V |
Voltage range | U, V, W | –0.7 | 6.5 | V |
FG, CS, FGS, COM | –0.1 | 5.5 | V | |
GND | –0.1 | 0.1 | V | |
PWM | –0.1 | 5.5 | V | |
Operating junction temperature, TJ | –40 | 125 | °C |
THERMAL METRIC(1) | DRV10866 | UNIT | |
---|---|---|---|
DSC (WSON) | |||
10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 42.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 44.5 | |
RθJB | Junction-to-board thermal resistance | 17.1 | |
ψJT | Junction-to-top characterization parameter | 0.3 | |
ψJB | Junction-to-board characterization parameter | 17.3 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 4.3 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||||
IVcc | Supply current | TA = +25°C; PWM = VCC; VCC = 5 V | 2.5 | 3.5 | mA | ||||
IVcc-Standby | Standby current | TA = +25°C; PWM = 0 V; VCC = 5 V | 5 | 10 | µA | ||||
UVLO | |||||||||
VUVLO-Th_r | UVLO threshold voltage, rising | Rise threshold, TA = +25°C | 1.80 | 1.9 | V | ||||
VUVLO-Th_f | UVLO threshold voltage, falling | Fall threshold, TA = +25°C | 1.6 | 1.65 | V | ||||
VUVLO-Th_hys | UVLO threshold voltage, hysteresis | TA = +25°C | 75 | 150 | 225 | mV | |||
INTEGRATED MOSFET | |||||||||
RDSON | Series resistance (H+L) | TA = +25°C; VCC = 5 V; IO = 0.5 A | 0.8 | 1.2 | Ω | ||||
TA = +25°C; VCC = 4 V; IO = 0.5 A | 0.9 | 1.4 | |||||||
TA = +25°C; VCC = 3 V; IO = 0.5 A | 1.1 | 1.7 | |||||||
PWM | |||||||||
VPWM-IH | High-level input voltage | VCC ≥ 4.5 V | 2.3 | V | |||||
VPWM-IL | Low-level input voltage | VCC ≥ 4.5 V | 0.8 | V | |||||
FPWM | PWM input frequency | 15 | 50 | kHz | |||||
IPWM-Source | Standby mode, VCC = 5 V | 5 | µA | ||||||
Active mode, VCC = 5 V | 100 | ||||||||
TSTBY | PWM = 0 | 500 | µs | ||||||
FG AND FGS | |||||||||
IFG-Sink | FG pin sink current | VFG = 0.3 V | 5 | mA | |||||
VFGS-Th | FG set threshold voltage | FG pin output, full FG signal, VCC ≥ 4.5 V | 0.8 | V | |||||
FG pin output, one-half FG signal, VCC ≥ 4.5 V | 2.3 | ||||||||
LOCK PROTECTION | |||||||||
TLOCK-On | Lock detect time | FG = 0 | 2 | 3 | 4 | s | |||
TLOCK-Off | Lock release time | 2.5 | 5 | 7.5 | s | ||||
CURRENT LIMIT | |||||||||
Current limit | CS pin to GND resistor = 3.9 kΩ | 680 | 800 | 920 | mA | ||||
THERMAL SHUTDOWN | |||||||||
TSHDN | Shutdown temperature threshold | 160 | °C | ||||||
Hysteresis | 10 |