JAJSN01 May   2024 DRV7308

ADVANCE INFORMATION  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Absolute Maximum Ratings
  7. 6 ESD Ratings
  8. 7 Recommended Operating Conditions
  9. 8 Thermal Information
  10. 9 Electrical Characteristics
  11. 10Timing Diagrams
  12. 11Typical Characteristics
  13. 12Detailed Description
    1. 12.1 Overview
    2. 12.2 Functional Block Diagram
    3. 12.3 Feature Description
      1. 12.3.1 Output Stage
      2. 12.3.2 Input Control Logic
      3. 12.3.3 ENABLE (EN) Pin Function
      4. 12.3.4 Temperature Sensor Output (VTEMP)
      5. 12.3.5 Brake Function
      6. 12.3.6 Slew Rate Control (SR)
      7. 12.3.7 Dead Time
      8. 12.3.8 Current Limit Functionaity (ILIMIT)
      9. 12.3.9 Pin Diagrams
        1. 12.3.9.1 Four-Level Input Pin
        2. 12.3.9.2 Open-Drain Pin
        3. 12.3.9.3 Logic-Level Input Pin (Internal Pulldown)
    4. 12.4 Protections
      1. 12.4.1 GVDD Undervoltage Lockout
      2. 12.4.2 Bootstrap Undervoltage Lockout
      3. 12.4.3 Current Limit Protection
      4. 12.4.4 GaNFET Overcurrent Protection
      5. 12.4.5 Thermal Shutdown (OTS)
  14. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
  15. 14Revision History
  16. 15Mechanical, Packaging, and Orderable Information
    1. 15.1 Tape and Reel Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
  • REN|68
サーマルパッド・メカニカル・データ
発注情報

12.3.7 Dead Time

The device is fully protected for any cross conduction of GaNFETs. In half-bridge configuration, the operation of the high-side and low-side GaNFETs are controlled to avoid any shoot-through currents by inserting dead time (tDEAD). This process is implemented by using an adaptive dead time circuit that senses the gate-source voltage (VGS) of the low-side GaNFET and the phase node (OUTx) voltage of the same half-bridge.