JAJST19 February   2024 DRV8262-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
      1. 5.4.1 Transient Thermal Impedance & Current Capability
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1  Overview
    2. 6.2  Functional Block Diagram
    3. 6.3  Feature Description
    4. 6.4  Device Operational Modes
      1. 6.4.1 Dual H-Bridge Mode (MODE1 = 0)
      2. 6.4.2 Single H-Bridge Mode (MODE1 = 1)
    5. 6.5  Current Sensing and Regulation
      1. 6.5.1 Current Sensing and Feedback
      2. 6.5.2 Current Regulation
        1. 6.5.2.1 Mixed Decay
        2. 6.5.2.2 Smart tune Dynamic Decay
      3. 6.5.3 Current Sensing with External Resistor
    6. 6.6  Charge Pump
    7. 6.7  Linear Voltage Regulator
    8. 6.8  VCC Voltage Supply
    9. 6.9  Logic Level, Tri-Level and Quad-Level Pin Diagrams
    10. 6.10 Protection Circuits
      1. 6.10.1 VM Undervoltage Lockout (UVLO)
      2. 6.10.2 VCP Undervoltage Lockout (CPUV)
      3. 6.10.3 Logic Supply Power on Reset (POR)
      4. 6.10.4 Overcurrent Protection (OCP)
      5. 6.10.5 Thermal Shutdown (OTSD)
      6. 6.10.6 nFAULT Output
      7. 6.10.7 Fault Condition Summary
    11. 6.11 Device Functional Modes
      1. 6.11.1 Sleep Mode
      2. 6.11.2 Operating Mode
      3. 6.11.3 nSLEEP Reset Pulse
      4. 6.11.4 Functional Modes Summary
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Driving Brushed-DC Motors
        1. 7.1.1.1 Brushed-DC Motor Driver Typical Application
        2. 7.1.1.2 Power Loss Calculations - Dual H-bridge
        3. 7.1.1.3 Power Loss Calculations - Single H-bridge
        4. 7.1.1.4 Junction Temperature Estimation
        5. 7.1.1.5 Application Performance Plots
      2. 7.1.2 Driving Stepper Motors
        1. 7.1.2.1 Stepper Driver Typical Application
        2. 7.1.2.2 Power Loss Calculations
        3. 7.1.2.3 Junction Temperature Estimation
      3. 7.1.3 Driving Thermoelectric Coolers (TEC)
  9. 8 Package Thermal Considerations
    1. 8.1 DDW Package
      1. 8.1.1 Thermal Performance
        1. 8.1.1.1 Steady-State Thermal Performance
        2. 8.1.1.2 Transient Thermal Performance
    2. 8.2 PCB Material Recommendation
  10. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
    2. 9.2 Power Supplies
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Tape and Reel Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.4 Device Operational Modes

The DRV8262-Q1 supports dual or single H-bridge with PH/EN or PWM interface. The mode of operation is selected by the MODE1 and MODE2 pins as shown in Table 6-2.

  • The MODE1 and MODE2 pin states are latched when the device is enabled through the nSLEEP pin or at power-up.
  • The MODE2 pin has to be grounded to select PH/EN interface.
  • To select PWM interface, keep MODE2 pin floating or connect the MODE2 pin to DVDD.
Table 6-2 Modes of Operation

MODE1

MODE2

Dual or Single H-bridge

Interface

0

0

Dual

PH/EN

Floating or DVDD

Dual

PWM

1

0

 Single PH/EN

Floating or DVDD

 Single

PWM

The INx inputs can be set to static voltages for 100% duty cycle drive, or the INx inputs can be pulse-width modulated for variable motor speed. The input pins can be powered before VM supply is applied.

Section 6.4.1 and Section 6.4.2 show the truth tables for each interface. Note that the tables do not take into account the internal current regulation feature. Additionally, the DRV8262-Q1 automatically handles the dead time generation when switching between the high-side and low-side MOSFETs of a H-bridge.