SLVSHB1A
March 2023 – November 2024
DRV8329-Q1
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Device Comparison Table
5
Pin Configuration and Functions
6
Specification
6.1
Absolute Maximum Ratings
6.2
ESD Ratings Auto
6.3
Recommended Operating Conditions
6.4
Thermal Information 2pkg
6.5
Electrical Characteristics
6.6
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Three BLDC Gate Drivers
7.3.1.1
PWM Control Modes
7.3.1.1.1
6x PWM Mode
7.3.1.1.2
3x PWM Mode
7.3.1.2
Device Hardware Interface
7.3.1.3
Gate Drive Architecture
7.3.1.3.1
Propagation Delay
7.3.1.3.2
Deadtime and Cross-Conduction Prevention
7.3.2
AVDD Linear Voltage Regulator
7.3.3
Pin Diagrams
7.3.4
Low-Side Current Sense Amplifiers
7.3.4.1
Current Sense Operation
7.3.5
Gate Driver Shutdown Sequence (DRVOFF)
7.3.6
Gate Driver Protective Circuits
7.3.6.1
PVDD Supply Undervoltage Lockout (PVDD_UV)
7.3.6.2
AVDD Power on Reset (AVDD_POR)
7.3.6.3
GVDD Undervoltage Lockout (GVDD_UV)
7.3.6.4
BST Undervoltage Lockout (BST_UV)
7.3.6.5
MOSFET VDS Overcurrent Protection (VDS_OCP)
7.3.6.6
VSENSE Overcurrent Protection (SEN_OCP)
7.3.6.7
Thermal Shutdown (OTSD)
7.4
Device Functional Modes
7.4.1
Gate Driver Functional Modes
7.4.1.1
Sleep Mode
7.4.1.2
Operating Mode
7.4.1.3
Fault Reset (nSLEEP Reset Pulse)
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Three Phase Brushless-DC Motor Control
8.2.1.1
Detailed Design Procedure
8.2.1.1.1
Motor Voltage
8.2.1.1.2
Bootstrap Capacitor and GVDD Capacitor Selection
8.2.1.1.3
Gate Drive Current
8.2.1.1.4
Gate Resistor Selection
8.2.1.1.5
System Considerations in High Power Designs
8.2.1.1.5.1
Capacitor Voltage Ratings
8.2.1.1.5.2
External Power Stage Components
8.2.1.1.5.3
Parallel MOSFET Configuration
8.2.1.1.6
Dead Time Resistor Selection
8.2.1.1.7
VDSLVL Selection
8.2.1.1.8
AVDD Power Losses
8.2.1.1.9
Current Sensing and Output Filtering
8.2.1.1.10
Power Dissipation and Junction Temperature Losses
8.2.2
Application Curves
8.3
Power Supply Recommendations
8.3.1
Bulk Capacitance Sizing
8.4
Layout
8.4.1
Layout Guidelines
8.4.2
Thermal Considerations
8.4.2.1
Power Dissipation
9
Device and Documentation Support
9.1
Device Support
9.1.1
Device Nomenclature
9.2
Documentation Support
9.2.1
Related Documentation
9.3
Related Links
9.4
Receiving Notification of Documentation Updates
9.5
Community Resources
9.6
Trademarks
10
Revision History
11
Mechanical, Packaging, and Orderable Information
パッケージ・オプション
メカニカル・データ(パッケージ|ピン)
RGF|40
MPQF173F
サーマルパッド・メカニカル・データ
RGF|40
QFND710
発注情報
slvshb1a_oa
1
Features
65V Three Phase Half-Bridge Gate Driver
Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)
4.5 to 60V Operating Voltage Range
Supports 100% PWM Duty Cycle with Trickle Charge pump
Bootstrap based Gate Driver Architecture
1000mA Maximum Peak Source Current
2000mA Maximum Peak Sink Current
Integrated Current Sense Amplifier with low input offset (optimized for 1 shunt)
Adjustable Gain (5, 10, 20, 40V/V)
Hardware interface provides simple configuration
Ultra-low power sleep mode <1uA at 25 ̊C
4ns (typ) propagation delay matching between phases
Independent driver shutdown path (DRVOFF)
65V tolerant wake pin (nSLEEP)
Supports negative transients upto -10V on SHx
6x and 3x PWM Modes
Supports 3.3V, and 5V Logic Inputs
Accurate LDO (AVDD), 3.3V ±3%, 80mA
Compact QFN Packages and Footprints
Adjustable VDS overcurrent threshold through VDSLVL pin
Adjustable deadtime through DT pin
Efficient System Design With
Power Blocks
Integrated Protection Features
PVDD Undervoltage Lockout (PVDDUV)
GVDD Undervoltage (GVDDUV)
Bootstrap Undervoltage (BST_UV)
Overcurrent Protection (VDS_OCP, SEN_OCP)
Thermal Shutdown (OTSD)
Fault Condition Indicator (nFAULT)