JAJSGQ9A March 2018 – April 2019 DRV8343-Q1
PRODUCTION DATA.
The DRV8343-Q1 device is an integrated gate driver for three-phase motor driver automotive applications. These devices decrease system complexity by integrating three independent half-bridge gate drivers, charge pump, and linear regulator for the supply voltages of the high-side and low-side gate drivers.The device also integrates three current shunt (or current sense) amplifiers. A standard serial peripheral interface (SPI) provides a simple method for configuring the various device settings and reading fault diagnostic information through an external controller. Alternatively, a hardware interface (H/W) option allows for configuring the most common settings through fixed external resistors.
The gate drivers support external N-channel high-side and low-side power MOSFETs and can drive up to 1-A source, 2-A sink peak currents. A doubler charge pump generates the supply voltage of the high-side gate drive. This charge pump architecture regulates the VCP output voltage for driving high-side power MOSFET. The supply voltage of the low-side gate driver is generated using a linear regulator from the VM power supply that regulates for driving low-side power MOSFET. A Smart Gate Drive architecture provides the ability to dynamically adjust the strength of the gate drive output current which lets the gate driver control the VDS switching speed of the power MOSFET. This feature lets the user remove the external gate drive resistors and diodes, reducing the component count in the bill of materials (BOM), cost, and area of the printed circuit board (PCB). The architecture also uses an internal state machine to protect against short-circuit events in the gate driver, control the half-bridge dead time, and protect against dV/dt parasitic turnon of the external power MOSFET.
The DRV8343-Q1 device integrates three bidirectional current sense amplifiers for monitoring the current level through each of the external half-bridges using a low-side shunt resistor. The gain setting of the current sense amplifiers can be adjusted through the SPI or hardware interface. The SPI method providing additional flexibility to adjust the output bias point.
In addition to the high level of device integration, the DRV8343-Q1 device provides a wide range of integrated protection features. These features include power supply undervoltage lockout (UVLO), charge pump undervoltage lockout (CPUV), short to supply (SHT_BAT), short-to-ground (SHT_GND), open-load detection (OLD), VDS overcurrent monitoring (OCP), gate driver short-circuit detection (GDF), and overtemperature shutdown (OTW and OTSD). Fault events are indicated by the nFAULT pin with detailed information available in the SPI registers on the SPI device version.
The DRV8343-Q1 device is available in a 0.5-mm pin pitch, 7 × 7 mm, HTQFP surface-mount package.