JAJS491K July   2008  – March 2021 DRV8800 , DRV8801

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1  Logic Inputs
      2. 8.3.2  VREG (DRV8800 Only)
      3. 8.3.3  VPROPI (DRV8801 Only)
        1. 8.3.3.1 Connecting VPROPI Output to ADC
      4. 8.3.4  Charge Pump
      5. 8.3.5  Shutdown
      6. 8.3.6  Low-Power Mode
      7. 8.3.7  Braking
      8. 8.3.8  Diagnostic Output
      9. 8.3.9  Thermal Shutdown (TSD)
      10. 8.3.10 Overcurrent Protection
      11. 8.3.11 SENSE
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Operation
        1. 8.4.1.1 Slow-Decay SR (Brake Mode)
        2. 8.4.1.2 Fast Decay With Synchronous Rectification
          1. 8.4.1.2.1 34
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Motor Voltage
        2. 9.2.2.2 Power Dissipation
        3. 9.2.2.3 Thermal Considerations
          1. 9.2.2.3.1 Junction-to-Ambiant Thermal Impedance (ƟJA)
        4. 9.2.2.4 Motor Current Trip Point
        5. 9.2.2.5 Sense Resistor Selection
        6. 9.2.2.6 Drive Current
      3. 9.2.3 Pulse-Width Modulating
        1. 9.2.3.1 Pulse-Width Modulating ENABLE
        2. 9.2.3.2 Pulse-Width Modulating PHASE
      4. 9.2.4 Application Curves
    3. 9.3 Parallel Configuration
      1. 9.3.1 Parallel Connections
      2. 9.3.2 Non – Parallel Connections
      3. 9.3.3 Wiring nFAULT as Wired OR
      4. 9.3.4 Electrical Considerations
        1. 9.3.4.1 Device Spacing
        2. 9.3.4.2 Recirculation Current Handling
        3. 9.3.4.3 Sense Resistor Selection
        4. 9.3.4.4 Maximum System Current
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Trademarks
    3. 12.3 静電気放電に関する注意事項
    4. 12.4 用語集
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.3.4 Charge Pump

The charge pump is used to generate a supply above VBB to drive the source-side DMOS gates. A 0.1-μF ceramic monolithic capacitor should be connected between CP1 and CP2 for pumping purposes. A 0.1-μF ceramic monolithic capacitor, CStorage, should be connected between VCP and VBB to act as a reservoir to run the high-side DMOS devices. The VCP voltage level is internally monitored and, in the case of a fault condition, the outputs of the device are disabled.