SLVSAR1E January   2011  – July 2015 DRV8833

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Fixed-Frequency PWM Motor Drivers
      2. 7.3.2 Bridge Control and Decay Modes
      3. 7.3.3 Current Control
      4. 7.3.4 nSLEEP Operation
      5. 7.3.5 Protection Circuits
        1. 7.3.5.1 Overcurrent Protection (OCP)
        2. 7.3.5.2 Thermal Shutdown (TSD)
        3. 7.3.5.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Motor Current Trip Point
        3. 8.2.2.3 Sense Resistor
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
    2. 9.2 Power Supply and Logic Sequencing
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Heatsinking
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Maximum Output Current
      2. 10.3.2 Thermal Protection
    4. 10.4 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • PW|16
  • RTY|16
  • PWP|16
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VM Power supply voltage –0.3 11.8 V
Digital input pin voltage –0.5 7 V
xISEN pin voltage –0.3 0.5 V
Peak motor drive output current Internally limited A
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

TA = 25°C (unless otherwise noted)
MIN NOM MAX UNIT
VM Motor power supply voltage range(1) 2.7 10.8 V
VDIGIN Digital input pin voltage range –0.3 5.75 V
IOUT RTY package continuous RMS or DC output current per bridge(2) 1.5 A
(1) RDS(ON) increases and maximum output current is reduced at VM supply voltages below 5 V.
(2) VM = 5 V, power dissipation and thermal limits must be observed.

6.4 Thermal Information

THERMAL METRIC(1) DRV8833 UNIT
PWP
(HTSSOP)
RTY
(WQFN)
PW
(TSSOP)
16 PINS 16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 40.5 37.2 103.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 32.9 34.3 38 °C/W
RθJB Junction-to-board thermal resistance 28.8 15.3 48.1 °C/W
ψJT Junction-to-top characterization parameter 0.6 0.3 3 °C/W
ψJB Junction-to-board characterization parameter 11.5 15.4 47.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.8 3.5 N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
IVM VM operating supply current VM = 5 V, xIN1 = 0 V, xIN2 = 0 V 1.7 3 mA
IVMQ VM sleep mode supply current VM = 5 V 1.6 2.5 μA
VUVLO VM undervoltage lockout voltage VM falling 2.6 V
VHYS VM undervoltage lockout hysteresis 90 mV
LOGIC-LEVEL INPUTS
VIL Input low voltage nSLEEP 0.5 V
All other pins 0.7
VIH Input high voltage nSLEEP 2.5 V
All other pins 2
VHYS Input hysteresis 0.4 V
RPD Input pulldown resistance nSLEEP 500
All except nSLEEP 150
IIL Input low current VIN = 0 1 μA
IIH Input high current VIN = 3.3 V, nSLEEP 6.6 13 μA
VIN = 3.3 V, all except nSLEEP 16.5 33
tDEG Input deglitch time 450 ns
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL Output low voltage IO = 5 mA 0.5 V
IOH Output high leakage current VO = 3.3 V 1 μA
H-BRIDGE FETs
RDS(ON) HS FET on resistance VM = 5 V, IO = 500 mA, TJ = 25°C 200
VM = 5 V, IO = 500 mA, TJ = 85°C 325
VM = 2.7 V, IO = 500 mA, TJ = 25°C 250
VM = 2.7 V, IO = 500 mA, TJ = 85°C 350
LS FET on resistance VM = 5 V, IO = 500 mA, TJ = 25°C 160
VM = 5 V, IO = 500 mA, TJ = 85°C 275
VM = 2.7 V, IO = 500 mA, TJ = 25°C 200
VM = 2.7 V, IO = 500 mA, TJ = 85°C 300
IOFF Off-state leakage current VM = 5 V, TJ = 25°C, VOUT = 0 V –1 1 μA
MOTOR DRIVER
ƒPWM Current control PWM frequency Internal PWM frequency 50 kHz
tR Rise time VM = 5 V, 16 Ω to GND, 10% to 90% VM 180 ns
tF Fall time VM = 5 V, 16 Ω to GND, 10% to 90% VM 160 ns
tPROP Propagation delay INx to OUTx VM = 5 V 1.1 µs
tDEAD Dead time(1) VM = 5 V 450 ns
PROTECTION CIRCUITS
IOCP Overcurrent protection trip level 2 3.3 A
tDEG OCP Deglitch time 4 µs
tOCP Overcurrent protection period 1.35 ms
tTSD Thermal shutdown temperature Die temperature 150 160 180 °C
CURRENT CONTROL
VTRIP xISEN trip voltage 160 200 240 mV
tBLANK Current sense blanking time 3.75 µs
SLEEP MODE
tWAKE Start-up time nSLEEP inactive high to H-bridge on 1 ms
(1) Internal dead time. External implementation is not necessary.

6.6 Typical Characteristics

DRV8833 C001_SLVSAR1.png
Figure 1. Operating Current
DRV8833 C003_SLVSAR1.png
Figure 3. RDS(on) (HS + LS)
DRV8833 C002_SLVSAR1.png
Figure 2. Sleep Current
DRV8833 C004_SLVSAR1.png
Figure 4. RDS(on) (HS + LS)