SLVSHN2 July 2024 DRV8962-Q1
PRODUCTION DATA
For a H-bridge with high-side recirculation, power dissipation for each FET can be approximated as follows:
PHS1 = RDS(ON) × IL2
PLS1 = 0
PHS2 = [RDS(ON) × IL2 x (1-D)] + [2 x VD x IL x tD x fPWM]
PLS2 = [RDS(ON) × IL2 x D] + [VM x IL x tRF x fPWM]
For estimating power dissipation for load current flow in the reverse direction, identical equations apply, with only swapping of HS1 with HS2 and LS1 with LS2.
Substituting the following values in the equations above -
VM = 24 V
IL = 4 A
RDS(ON) = 53 mΩ
D = 0.5
VD = 1 V
tD = 300 ns
tRF = 70 ns
fPWM = 20 kHz
The losses in each FET can be calculated as follows -
PHS1 = 53 mΩ × 42 = 0.848 W
PLS1 = 0
PHS2 = [53 mΩ × 42 x (1-0.5)] + [2 x 1 V x 4 A x 300 ns x 20 KHz] = 0.472 W
PLS2 = [ 53 mΩ × 42 x 0.5] + [24 x 4 A x 70 ns x 20 kHz] = 0.558 W
Quiescent Current Loss PQ = 24 V × 4 mA = 0.096 W
PTOT = 2 x (PHS1 + PLS1 + PHS2 + PLS2) + PQ = 2 x (0.848 + 0 + 0.472 + 0.558) + 0.096 = 3.852 W